N-Channel MOSFET. FCPF380N65FL1-F154 Datasheet

FCPF380N65FL1-F154 MOSFET. Datasheet pdf. Equivalent

FCPF380N65FL1-F154 Datasheet
Recommendation FCPF380N65FL1-F154 Datasheet
Part FCPF380N65FL1-F154
Description N-Channel MOSFET
Feature FCPF380N65FL1-F154; MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 10.2 A, 380 mW FCPF380N65FL1-F154 Description SUPERF.
Manufacture ON Semiconductor
Datasheet
Download FCPF380N65FL1-F154 Datasheet




ON Semiconductor FCPF380N65FL1-F154
MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 10.2 A, 380 mW
FCPF380N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
Features
700 V @ TJ = 150°C
RDS(on) = 320 mW (Typ.)
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
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VDSS
650 V
RDS(ON) MAX
380 mW @ 10 V
ID MAX
10.2 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
380N65F
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF380N65F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF380N65FL1F154/D



ON Semiconductor FCPF380N65FL1-F154
FCPF380N65FL1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±20
V
±30
ID
Drain Current
Continuous (TC = 25°C)
10.2
Continuous (TC = 100°C)
6.4
IDM
Drain Current
Pulsed (Note 1)
30.6
EAS
Single Pulsed Avalanche Energy (Note 2)
212
IAS
Avalanche Current (Note 2)
2.3
EAR
Repetitive Avalanche Energy (Note 1)
0.33
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
33
W
0.26
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 2.3 A, RG = 25 W, starting TJ = 25°C.
3. ISD 5.1 A, di/dt 200 A/ms, VDD 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.8
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF380N65FL1F154
FCPF380N65F
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
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2



ON Semiconductor FCPF380N65FL1-F154
FCPF380N65FL1F154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 10 mA, TJ = 150_C
700
V
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
0.72
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TC = 125_C
VGS = ±20 V, VDS = 0 V
10
mA
40
±100
mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 1 mA
VGS = 10 V, ID = 5.1 A
VDS = 20 V, ID = 5.1 A
3
5
V
320
380
mW
9.9
S
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V, f = 1 MHz
1265 1680
pF
42
55
pF
1.0
pF
VDS = 380 V, VGS = 0 V, f = 1 MHz
25
pF
VDS = 0 V to 400 V, VGS = 0 V
165
pF
VDS = 380 V, ID = 5.1 A, VGS = 10 V
(Note 4)
33
43
nC
6.6
nC
14
nC
f = 1 MHz
0.46
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCEDRAIN DIODE CHARACTERISTICS
VDD = 380 V, ID = 5.1 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
18
46
ns
7.8
25.6
ns
45
100
ns
8
26
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
10.2
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
30.6
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5.1 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 5.1 A,
dIF/dt = 100 A/ms
84
ns
224
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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