Recovery Diode. DSEP60-12B Datasheet

DSEP60-12B Diode. Datasheet pdf. Equivalent

DSEP60-12B Datasheet
Recommendation DSEP60-12B Datasheet
Part DSEP60-12B
Description High Performance Fast Recovery Diode
Feature DSEP60-12B; HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number D.
Manufacture IXYS
Datasheet
Download DSEP60-12B Datasheet





IXYS DSEP60-12B
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP60-12B
3
1
DSEP60-12B
advanced
VRRM = 1200 V
I FAV
=
60 A
t rr
=
35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a



IXYS DSEP60-12B
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
average forward current
VR = 1200 V
VR = 1200 V
IF = 60 A
IF = 120 A
IF = 60 A
IF = 120 A
TC = 110°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
t rr
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 600 V f = 1 MHz
reverse recovery time
IF = 60 A; VR = 600 V
-di F /dt = 200 A/µs
DSEP60-12B
advanced
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150 °C
TVJ = 175°C
Ratings
min. typ. max. Unit
1200 V
1200 V
200 µA
1 mA
3.25 V
3.90 V
2.20 V
2.85 V
60 A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25 °C
TVJ = 100 °C
0.25
30
11
17
65
190
1.10 V
15 m
0.45 K/W
K/W
330 W
500 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a



IXYS DSEP60-12B
Package TO-247
Symbol
I RMS
TVJ
Top
Tstg
Weight
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
MD
mounting torque
F
C
mounting force with clip
Product Marking
Conditions
per terminal
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
DSEP60-12B
advanced
Ratings
min. typ. max. Unit
70 A
-55
175 °C
-55
150 °C
-55
150 °C
6
g
0.8
1.2 Nm
20
120 N
Ordering
Standard
Ordering Number
DSEP60-12B
Marking on Product
DSEP60-12B
Delivery Mode
Tube
Quantity Code No.
30
501210
Similar Part
DSEP60-12A
Package
TO-247AD (2)
Voltage class
1200
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Fast
Diode
1.1
12.4
* on die level
T VJ = 175 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a





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