N-CHANNEL MOSFET. DMG7N65SCT Datasheet

DMG7N65SCT MOSFET. Datasheet pdf. Equivalent

DMG7N65SCT Datasheet
Recommendation DMG7N65SCT Datasheet
Part DMG7N65SCT
Description N-CHANNEL MOSFET
Feature DMG7N65SCT; Product Summary BVDSS 650V RDS(ON) 1.4Ω@VGS = 10V ID TC = +25°C 7.7A DMG7N65SCT N-CHANNEL ENHANC.
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Datasheet
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Diodes DMG7N65SCT
Product Summary
BVDSS
650V
RDS(ON)
1.4Ω@VGS = 10V
ID
TC = +25°C
7.7A
DMG7N65SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB (Type TH)
ESD PROTECTED
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMG7N65SCT
Case
TO220AB (Type TH)
Packaging
50 Pieces/Tube
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
7N65SCT
YYWW
DMG7N65SCT
Document number: DS39327 Rev. 3 - 2
= Manufacturer’s Marking
7N65SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
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Diodes DMG7N65SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 6)
Avalanche Energy, L = 60mH (Note 6)
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMG7N65SCT
Value
Unit
650
V
±30
V
7.7
4.8
A
1.1
A
7.7
A
10
A
1.1
A
42
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TA = +25°C
Symbol
PD
PD
RJA
RJC
TJ, TSTG
Value
125
50
2.5
50
1
-55 to +150
Unit
W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
650
2
Typ
3
1.1
0.8
886
63
8.9
1.4
25.2
3.5
12.4
10
11
36
15
271
1908
Notes:
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. Short duration pulse test used to minimize self-heating effect.
Max
1
10
4
1.4
1.5
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 650V, VGS = 0V
µA VGS = ±24V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
V VGS = 0V, IS = 5A
pF VDS = 50V, f = 1.0MHz,
VGS = 0
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 480V, ID = 5A,
VGS = 10V
ns VDS = 300V, RG = 4.7, ID = 2.5A,
VGS = 10V
ns
µC VDS = 60V, IF = 5A, dI/dt = 100A/μs
DMG7N65SCT
Document number: DS39327 Rev. 3 - 2
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June 2020
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Diodes DMG7N65SCT
DMG7N65SCT
7.0
VGS = 10.0V
6.0
VGS = 8.0V
VGS = 6.0V
5.0
VGS = 5.0V
4.0
VGS = 4.5V
5
VDS = 10V
4
3
3.0
2
2.0
1.0
0.0
0
2
1.8
VGS = 3.5V
VGS = 4.0V
VGS = 3.8V
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
150oC
85oC
25oC
125oC
-55oC
0
012345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
10
1.6
8
1.4
1.2
1
VGS = 10.0V
0.8
ID = 2.5A
6
4
0.6
0.4
2
0.2
0
0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
4
VGS = 10V
3.5
3
150oC
2.5
125oC
2
85oC
1.5
1
25oC
0.5
-55oC
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Figue 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
0
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
2.5
2
VGS = 10V, ID = 2.5A
1.5
1
0.5
0
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMG7N65SCT
Document number: DS39327 Rev. 3 - 2
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June 2020
© Diodes Incorporated





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