N-CHANNEL MOSFET. DMJ70H601SK3 Datasheet

DMJ70H601SK3 MOSFET. Datasheet pdf. Equivalent

DMJ70H601SK3 Datasheet
Recommendation DMJ70H601SK3 Datasheet
Part DMJ70H601SK3
Description N-CHANNEL MOSFET
Feature DMJ70H601SK3; NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSF.
Manufacture DIODES
Datasheet
Download DMJ70H601SK3 Datasheet





DIODES DMJ70H601SK3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
DMJ70H601SK3
700V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
700V
RDS(ON) max
0.6@ VGS = 10V
ID
TC = +25°C
8A
Features
Low Gate Input Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Adaptor
LCD & PDP TV
Lighting
Mechanical Data
Case: TO252 (DPAK) (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252 (DPAK) (Type TH)
D
Top View
D
G
S
Top View
Pin Out
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMJ70H601SK3-13
Compliance
Standard
Case
TO252 (DPAK) (Type TH)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
= Manufacturers Marking
8N70SK = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
DMJ70H601SK3
Document number: DS39420 Rev. 4 - 3
1 of 7
www.diodes.com
July 2018
© Diodes Incorporated



DIODES DMJ70H601SK3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMJ70H601SK3
Value
700
±30
8
6.4
4
15
1.7
86
7
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
125
50
72
1.0
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
700
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
IGSS
Gate Threshold Voltage
VGS(TH)
2
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
VSD
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
RG

Total Gate Charge
Qg

Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF

Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Time (TJ = +150°C)
tRR

Body Diode Reverse Recovery Charge
QRR

Body Diode Reverse Recovery Charge (TJ = +150°C) QRR

Typ
3.4
0.5
0.85
686
267
8
2.6
20.9
3.0
9.4
10
23
32
17
261
337
3.0
4.0
Max
1
100
4
0.6
1.3






Unit
V
µA
nA
V
V
pF
nC
ns
ns
ns
µC
µC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.1A
VGS = 0V, IS = 2.1A
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 560V, ID = 8A,
VGS = 10V
VDD = 350V, VGS = 10V,
RG = 4.7, ID = 8A
IS = 8A, dI/dt = 100A/μs
DMJ70H601SK3
Document number: DS39420 Rev. 4 - 3
2 of 7
www.diodes.com
July 2018
© Diodes Incorporated



DIODES DMJ70H601SK3
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
DMJ70H601SK3
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
0.60
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 5.0V
VGS = 4.5V
VGS = 4.2V
1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
VDS = 10V
4
3
2
1
TJ = 150oC
TJ = 85oC
TJ = 125oC
0
TJ = 25oC
TJ = -55oC
012345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.55
0.50
0.45
0.40
0.35
VGS = 10V
4
ID = 2.1A
3
2
1
0.30
0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.5
VGS = 10V
TJ = 150oC
1.2
TJ = 125oC
0.9
TJ = 85oC
0.6
TJ = 25oC
0.3
TJ = -55oC
0
0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
0
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
2.5
2
1.5
1
VGS = 10V, ID = 2.1A
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMJ70H601SK3
Document number: DS39420 Rev. 4 - 3
3 of 7
www.diodes.com
July 2018
© Diodes Incorporated





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