N-CHANNEL MOSFET. DMN60H3D5SK3 Datasheet

DMN60H3D5SK3 MOSFET. Datasheet pdf. Equivalent

DMN60H3D5SK3 Datasheet
Recommendation DMN60H3D5SK3 Datasheet
Part DMN60H3D5SK3
Description N-CHANNEL MOSFET
Feature DMN60H3D5SK3; A D V A N C E DNIEN FWOPRRMOADT IU COTN Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET.
Manufacture DIODES
Datasheet
Download DMN60H3D5SK3 Datasheet




DIODES DMN60H3D5SK3
Green
DMN60H3D5SK3
600V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
600V
RDS(ON) Max
3.5@ VGS = 10V
ID
TC = +25°C
2.8A
Description
This new generation complementary MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO252 (DPAK) (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
TO252 (DPAK) (Type TH)
Top View
D
G
S
Top View
Pin Out
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN60H3D5SK3-13
Case
TO252 (DPAK) (Type TH)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
60H3D5S
YYWW
=Manufacturer’s Marking
60H3D5S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
1 of 7
www.diodes.com
January 2017
© Diodes Incorporated



DIODES DMN60H3D5SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt (VDD = 400V, ID = 2.7A)
Steady
State
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMN60H3D5SK3
Value
Unit
600
V
±30
V
2.8
1.8
A
2.5
A
4.4
A
1.0
A
30
mJ
2.7
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RJA
RJC
TJ, TSTG
Value
41
16
46
3.0
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
600
IDSS
IGSS
VGS(TH)
2.0
RDS(ON)
VSD
Ciss
Coss
Crss
RG

Qg

Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

tRR
QRR

Typ
Max
1.0
±100
3.1
4.0
2.7
3.5
0.9
1.5
354
41
4
2.6

12.6

1.7
7.1
10.6
22
34
28

198
952

Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Unit
V
µA
nA
V
V
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 0V, IS = 3.0A
VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 480V, ID = 2.5A
VGS = 10V , VDD = 300V, RG = 25,
ID = 2.5A
VGS = 0V, IS = 2.5A, dI/dt = 100A/μs
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
2 of 7
www.diodes.com
January 2017
© Diodes Incorporated



DIODES DMN60H3D5SK3
5.0
4.0
VGS=20.0V
3.0
VGS=5.0V
VGS=10.0V
2.0
VGS=6.0V
VGS=4.5V
1.0
0.0
0
VGS=8.0V
VGS=4.0V
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
4
1
VDS=10V
0.8
DMN60H3D5SK3
0.6
0.4
125
0.2
150
85
25
-55
0
2
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
10
3.5
3
VGS=10V
2.5
2
8
6
ID=1.5A
4
1.5
0
0.5
1
1.5
2
2.5
3
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
9
8
VGS=10V
7
150
125
6
85
5
4
25
3
2
-55
1
0
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN60H3D5SK3
Document number: DS37884 Rev. 2 - 2
3 of 7
www.diodes.com
3
2.5
2
VGS=10V, ID=4A
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
January 2017
© Diodes Incorporated





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)