N-CHANNEL MOSFET. DMN60H4D5SK3 Datasheet

DMN60H4D5SK3 MOSFET. Datasheet pdf. Equivalent

DMN60H4D5SK3 Datasheet
Recommendation DMN60H4D5SK3 Datasheet
Part DMN60H4D5SK3
Description N-CHANNEL MOSFET
Feature DMN60H4D5SK3; DMN60H4D5SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 600V RDS(ON) 4.5Ω@VGS = 10V .
Manufacture DIODES
Datasheet
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DIODES DMN60H4D5SK3
DMN60H4D5SK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
600V
RDS(ON)
4.5Ω@VGS = 10V
ID
TC = +25°C
2.5A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO252 (DPAK) (Type TH)
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO252 (DPAK) (Type TH) 0.33 grams (Approximate)
TO252 (DPAK) (Type TH)
D
Top View
Equivalent Circuit
D
G
S
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN60H4D5SK3-13
Case
TO252 (DPAK) (Type TH)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
60H4D5S
YYWW
= Manufacturer’s Marking
60H4D5S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMN60H4D5SK3
Document number: DS39430 Rev. 2 - 2
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated



DIODES DMN60H4D5SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
VGS = 10V
State
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TC = +25°C
TC = +100°C
Avalanche Current (Note 6)
L = 60mH
Avalanche Energy (Note 6)
Peak Diode Recovery dv/dt
7
L = 60mH
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
dv/dt
DMN60H4D5SK3
Value
600
±30
2.5
1.6
2.6
1.0
33
5
Unit
V
V
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
PD
RθJC
TJ, TSTG
Max
41
16
3.0
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ
BVDSS
600
IDSS
IGSS
VGS(TH)
2.0
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
273.5
30.8
4.2
3.5
8.2
1.1
3.7
9.8
10.5
33.4
13.2
172
682
Notes:
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. Short duration pulse test used to minimize self-heating effect.
Max
1
±100
4.0
4.5
1.5
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA VDS = 600V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V
VDS = VGS, ID = 250μA
Ω
VGS = 10V, ID = 1.0A
V
VGS = 0V, IS = 2.0A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VGS = 10V, VDS = 480V,
ID = 2A
ns
ns VGS = 10V, VDD = 300V,
ns RG = 25Ω, ID = 2A
ns
ns dI/dt = 100A/µs, VGS = 0V,
μC IF = 2A
DMN60H4D5SK3
Document number: DS39430 Rev. 2 - 2
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated



DIODES DMN60H4D5SK3
3.0
VGS = 6.0V
2.5
VGS = 7.0V
VGS = 8.0V
2.0
VGS = 10V
1.5
VGS = 5.0V
VGS = 4.5V
1.0
VGS = 4.0V
0.5
0.0
0
4
VGS = 3.5V
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3.9
3.8
3.7
3.6
3.5
3.4
3.3
3.2
VGS = 10V
3.1
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
15
VGS = 10V
150oC
12
9
125oC
6
85oC
3
25oC
-55oC
0
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain
Current and Temperature
1
VDS = 10V
0.8
DMN60H4D5SK3
0.6
0.4
0.2
0
0
10
9
8
7
6
5
4
3
0
3
150oC
125oC
85oC
25oC
-55oC
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
ID = 1.0A
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
2
VGS = 10V, ID = 1A
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN60H4D5SK3
Document number: DS39430 Rev. 2 - 2
3 of 7
www.diodes.com
April 2017
© Diodes Incorporated





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