N-Channel MOSFET. DMTH10H005SCT Datasheet

DMTH10H005SCT MOSFET. Datasheet pdf. Equivalent

DMTH10H005SCT Datasheet
Recommendation DMTH10H005SCT Datasheet
Part DMTH10H005SCT
Description N-Channel MOSFET
Feature DMTH10H005SCT; isc N-Channel MOSFET Transistor DMTH10H005SCT FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Sou.
Manufacture INCHANGE
Datasheet
Download DMTH10H005SCT Datasheet




INCHANGE DMTH10H005SCT
isc N-Channel MOSFET Transistor
DMTH10H005SCT
FEATURES
·Drain Current –ID= 140A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 5.0mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
140
A
IDM
Drain Current-Single Pluse
400
A
PD
Total Dissipation @TC=25
187
W
TJ
Max. Operating Junction Temperature -55~175
Tstg
Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.8
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



INCHANGE DMTH10H005SCT
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 13A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=80V; VGS= 0
VSD
Forward On-Voltage
IS= 13A; VGS= 0
DMTH10H005SCT
MIN MAX UNIT
100
V
2.0
4.0
V
5.0
mΩ
±100 nA
1.0
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)