N-Channel MOSFET. FCD260N65S3 Datasheet

FCD260N65S3 MOSFET. Datasheet pdf. Equivalent

FCD260N65S3 Datasheet
Recommendation FCD260N65S3 Datasheet
Part FCD260N65S3
Description N-Channel MOSFET
Feature FCD260N65S3; FCD260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description SUPE.
Manufacture ON Semiconductor
Datasheet
Download FCD260N65S3 Datasheet





ON Semiconductor FCD260N65S3
FCD260N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 12 A, 260 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 222 mW
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
260 mW @ 10 V
ID MAX
12 A
D
G
S
POWER MOSFET
D
G
S
DPAK
CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K
FCD
260N65S3
$Y
&Z
&3
&K
FCD260N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
August, 2019 Rev. 3
Publication Order Number:
FCD260N65S3/D



ON Semiconductor FCD260N65S3
FCD260N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
12
Continuous (TC = 100°C)
7.6
IDM
Drain Current
Pulsed (Note 1)
30
EAS
Single Pulsed Avalanche Energy (Note 2)
57
IAS
Avalanche Current (Note 1)
2.3
EAR
Repetitive Avalanche Energy (Note 1)
0.9
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
90
W
0.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 2.3 A, RG = 25 W, starting TJ = 25°C.
3. ISD 6 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material.
Value
1.39
40
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size Tape Width
Shipping
FCD260N65S3
FCD260N65S3
DPAK
330 mm
16 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2



ON Semiconductor FCD260N65S3
FCD260N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
ID = 1 mA, Referenced to 25_C
0.66
V
V
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
1
mA
0.77
±100 nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.29 mA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
2.5
4.5
V
222 260 mW
7.4
S
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
1010
pF
Coss
Output Capacitance
25
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
248
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
33
pF
Qg(tot)
Qgs
Total Gate Charge at 10 V
Gate to Source Gate Charge
VDS = 400 V, ID = 6 A, VGS = 10 V
24
nC
(Note 5)
6.1
nC
Qgd
Gate to Drain “Miller” Charge
9.7
nC
ESR
Equivalent Series Resistance
f = 1 MHz
8.7
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7 W
(Note 5)
18
ns
18
ns
49
ns
12
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
12
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
30
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 6 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 6 A,
dIF/dt = 100 A/ms
251
ns
3.4
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3





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