N-channel IGBT. DGU4015G Datasheet

DGU4015G IGBT. Datasheet pdf. Equivalent

DGU4015G Datasheet
Recommendation DGU4015G Datasheet
Part DGU4015G
Description N-channel IGBT
Feature DGU4015G; VBR(CES) = 400 V, IC = 15 A N-channel Ignition IGBT DGU4015G Data Sheet Description The DGU4015G i.
Manufacture Sanken
Datasheet
Download DGU4015G Datasheet





Sanken DGU4015G
VBR(CES) = 400 V, IC = 15 A
N-channel Ignition IGBT
DGU4015G
Data Sheet
Description
The DGU4015G is 400 V IGBT with Zener diodes
and gate resistors, and achieves an ignition coil drive
circuit without an external clamped circuit. The IGBT
has low saturation characteristic, and can improve the
efficiency of the circuit.
Features
Suitable for High Reliability and Automotive
Requirement
Bare Lead Frame: Pb-free (RoHS Compliant)
Built-in Zener Diodes
Built-in Gate Resistors
Low Saturation Voltage
V(BR)CES ------------------------------------------------- 400 V
IC----------------------------------------------------------- 15 A
VCE(SAT) -------------- 1.4 V typ. (VGE = 4.5 V, IC = 10 A)
Applications
Ignition Coil Driver Circuits
Package
TO252-2L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(1)
(2) Collector
(3) Emitter
(4) Collector
(3)
Not to scale
DGU4015G-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
1
Oct. 15, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020



Sanken DGU4015G
DGU4015G
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Collector-to-Emitter Voltage
VCE
CLAMPED
V
Gate-to-Emitter Voltage
VGE
±10
V
Continuous Collector Current
IC
TC = 25 °C
15
A
Power Dissipation
PD
TC = 25 °C
60
W
Self-clamped Inductive Switching
Energy
ESCIS
See Figure 1 and
Equation (1).
150
mJ
Operating Junction Temperature
TJ
55 to 175
°C
Storage Temperature
TSTG
55 to 175
°C
Recommended Operating Conditions
Parameter
External Gate Resistor
Symbol
RG
Conditions
Min. Typ. Max. Unit
200
Ω
Conditions:
RG = 200 Ω
L
VCE
L = 1.3 mH
VCE
VCC
RG
VCC
IC
IC
VGE
DUT
ISCIS
(I G BT )
(a) Test Circuit
(b) Waveform
Figure 1. Self-clamped Inductive Switching Energy Test
V(BR)CES
t
t
ESCIS
=
1
2
×
L
×
ISCIS2
×
V(BR)CES
V(BR)CES − VCC
(1)
DGU4015G-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
2
Oct. 15, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020



Sanken DGU4015G
DGU4015G
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
Gate-to-Emitter Breakdown Voltage V(BR)GES
Emitter-to-Collector Breakdown
Voltage
Collector-to-Emitter Leakage
Current
V(BR)ECS
ICES
Gate-to-Emitter Leakage Current
IGES
Gate Threshold Voltage
VGE(TH)
Collector-to-Emitter Saturation
Voltage
VCE(SAT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Internal Gate Resistor
Cies
Coes
Cres
td(ON)
tr
td(OFF)
tf
RG(INT)
Conditions
IC = 2 mA, VGE = 0 V
IG = ±1 mA, VCE = 0 V
IEC = 10 mA, VGE = 0 V
VCE = 300 V, VGE = 0 V
VGE = ±5 V
VCE = 10 V, IC = 1 mA
VGE = 4.5 V, IC = 5 A
VGE = 4.5 V, IC = 10 A
VCE = 10 V,
VGE = 0 V,
f = 1.0 MHz
Resistive load,
see Figure 2
Inductive load,
see Figure 3
Min. Typ. Max. Unit
375 400 425
V
±10.0 ±11.5 ±13.0 V
20
V
100 µA
±1.0 µA
1.4
1.8
2.2
V
1.1
1.4
V
1.4
1.7
V
910
pF
250
pF
75
pF
0.7
µs
2.1
µs
6.7
µs
3.6
µs
70
Ω
Thermal Characteristics
Parameter
Thermal Resistance
(Junction-to-Case)
Symbol
RθJC
Conditions
Min. Typ. Max.
2.5
Unit
°C/W
Mechanical Characteristics
Parameter
Package Weight
Conditions
Min.
Typ.
Max.
Unit
0.32
g
DGU4015G-DSE Rev.1.0
SANKEN ELECTRIC CO., LTD.
3
Oct. 15, 2020
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2020





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)