IGBT. MM25G3T120B Datasheet

MM25G3T120B IGBT. Datasheet pdf. Equivalent

MM25G3T120B Datasheet
Recommendation MM25G3T120B Datasheet
Part MM25G3T120B
Description IGBT
Feature MM25G3T120B; April 2018 Version 01 MM25G3T120B 1200V 25A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in t.
Manufacture MacMic
Datasheet
Download MM25G3T120B Datasheet





MacMic MM25G3T120B
April 2018
Version 01
MM25G3T120B
1200V 25A IGBT
RoHS Compliant
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM25G3T120B 1200V 25A
VCE(sat) TJ=25°C
1.8V
TJmax
175°C
Marking
MM25G3T120B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=110
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=100
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
1200
V
±20
40
25
A
80
326
W
1200
V
20
A
40
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
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MacMic MM25G3T120B
MM25G3T120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=25A, VGE=15V, TJ=25
IC=25A, VGE=15V, TJ=125
IC=25A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=25A
RG =30,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.8
2.1
2.2
150
1.9
85
35
40
45
35
40
40
210
250
270
100
150
180
3.4
3.6
2.4
2.55
100
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.46 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=20A , VGE=0V, TJ =25
VF
Forward Voltage
IF=20A , VGE=0V, TJ =125
IF=20A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=20A , VR=600V
dIF/dt=-500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.75 2.15
1.6
V
1.55
450
ns
21
A
4.6
µC
1.35
mJ
1.0 K /W
2



MacMic MM25G3T120B
50
25
40
150
30
20
10
MM25G3T120B
50
40
30
20
VGE=15V
10
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=150
0
0 0.5 1 1.5 2 2.5 3 3.5
VCEV
Figure 1. Typical Output Characteristics IGBT
50
VCE=20V
40
30
20
10
25
150
0
6
7
8
9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics IGBT
10
VCE=600V
Rg=30
8
VGE=±15V
TJ=150
6
4
2
Eon
Eoff
0
0
10
20
30
40
50
ICA
Figure 5. Switching Energy vs Collector Current IGBT
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
14
12
VCE=600V
IC=25A
VGE=±15V
10
TJ=150
8
Eon
6
Eoff
4
2
0
0
40
80
120
160
Rg
Figure 4. Switching Energy vs Gate Resistor IGBT
60
50
40
Rg=30
VGE=±15V
TJ=150
30
20
10
0
0 200 400 600 800 1000 1200 1400
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT
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