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IGBT. MM25G3T120B Datasheet |
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April 2018
Version 01
MM25G3T120B
1200V 25A IGBT
RoHS Compliant
PRODUCT FEATURES
□ IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM25G3T120B 1200V 25A
VCE(sat) TJ=25°C
1.8V
TJmax
175°C
Marking
MM25G3T120B
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃
TC=110℃
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current
TC=100℃
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
1200
V
±20
40
25
A
80
326
W
1200
V
20
A
40
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
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MM25G3T120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=25A, VGE=15V, TJ=25℃
IC=25A, VGE=15V, TJ=125℃
IC=25A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25℃
VCE=1200V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=25A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=25A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=25A
RG =30Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=125℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V
TJ=125℃,VCC=600V
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Min.
5.0
-400
Typ.
5.8
1.8
2.1
2.2
150
1.9
85
35
40
45
35
40
40
210
250
270
100
150
180
3.4
3.6
2.4
2.55
100
Max. Unit
6.5
2.25
V
100 µA
10 mA
400 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.46 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=20A , VGE=0V, TJ =25℃
VF
Forward Voltage
IF=20A , VGE=0V, TJ =125℃
IF=20A , VGE=0V, TJ =150℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=20A , VR=600V
dIF/dt=-500A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
Min. Typ. Max. Unit
1.75 2.15
1.6
V
1.55
450
ns
21
A
4.6
µC
1.35
mJ
1.0 K /W
2
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50
25℃
40
150℃
30
20
10
MM25G3T120B
50
40
30
20
VGE=15V
10
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=150℃
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE（V）
Figure 1. Typical Output Characteristics IGBT
50
VCE=20V
40
30
20
10
25℃
150℃
0
6
7
8
9 10 11 12
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
10
VCE=600V
Rg=30Ω
8
VGE=±15V
TJ=150℃
6
4
2
Eon
Eoff
0
0
10
20
30
40
50
IC）A（
Figure 5. Switching Energy vs Collector Current IGBT
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
14
12
VCE=600V
IC=25A
VGE=±15V
10
TJ=150℃
8
Eon
6
Eoff
4
2
0
0
40
80
120
160
Rg）Ω（
Figure 4. Switching Energy vs Gate Resistor IGBT
60
50
40
Rg=30Ω
VGE=±15V
TJ=150℃
30
20
10
0
0 200 400 600 800 1000 1200 1400
VCE）V（
Figure 6. Reverse Biased Safe Operating Area IGBT
3
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