IGBT. MM25G3U120BX Datasheet

MM25G3U120BX IGBT. Datasheet pdf. Equivalent

MM25G3U120BX Datasheet
Recommendation MM25G3U120BX Datasheet
Part MM25G3U120BX
Description IGBT
Feature MM25G3U120BX; August 2018 Preliminary MM25G3U120BX 1200V 25A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip i.
Manufacture MacMic
Datasheet
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MacMic MM25G3U120BX
August 2018
Preliminary
MM25G3U120BX
1200V 25A IGBT
RoHS Compliant
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM25G3U120BX 1200V 25A
VCE(sat) TJ=25°C
2.0V
TJmax
175°C
Marking
MM25G3U120BX
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=110
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=100
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Torque to heatsink
RecommendedM3
Weight
Values
Unit
1200
V
±20
40
25
A
80
326
W
1200
V
20
A
40
175
-40~175
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1
IGBT
MM25G3U120BX



MacMic MM25G3U120BX
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=1mA
IC=25A, VGE=15V, TJ=25
IC=25A, VGE=15V, TJ=125
IC=25A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=600V, IC=25A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=25V, VGE=0V, f =1MHz
TJ=25
VCC=600V,IC=25A
RG =30Ω,
TJ=125
TJ=150
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
VCC=600V,IC=25A
RG =30Ω,
TJ=125
TJ=150
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
VCC=600V,IC=25A
RG =30Ω,
TJ=125
TJ=150
VGE=±15V,
Inductive Load
TJ=125
TJ=150
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-400
Typ.
6.0
2
2.3
2.4
150
1.8
75
35
40
45
35
40
40
210
250
270
90
140
160
2
2.2
2.2
2.3
100
Max. Unit
6.5
2.5
V
100 µA
10 mA
400 nA
nC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.46 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
IF=20A , VGE=0V, TJ =25
IF=20A , VGE=0V, TJ =125
IF=20A , VGE=0V, TJ =150
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=20A , VR=600V
dIF/dt=-500A/μs
TJ =150
Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.75 2.15
1.6
V
1.55
450
ns
21
A
4.6
µC
1.35
mJ
1.0 K /W
MM25G3U120BX
2



MacMic MM25G3U120BX
Dimensions in (mm)
Figure 13. Package Outline
3





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