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IGBT. MM40G3U65BN Datasheet |
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January 2021
Version 01
MM40G3U65BN
650V 40A IGBT
RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT chip in trench FS-technology
□ Low switching losses
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM40G3U65BN 650V 40A
VCE(sat) TJ=25°C
1.75V
TJmax
175°C
Marking
MM40G3U65BN
Package
TO-247
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
ICpuls
Ptot
VRRM
IF(AV)
IFpuls
TJmax
TJop
Tstg
DC Collector Current
Pulsed collector current,tp limited by TJmax
Power Dissipation Per IGBT
TC=25℃
TC=100℃
Repetitive Reverse Voltage
Average Forward Current
Diode pulsed current,tp limited by TJmax
Max. Junction Temperature
TJ=25℃
TC=25℃
Operating Temperature
Storage Temperature
Torque to heatsink
Recommended（M3）
Weight
Values
Unit
650
V
±20
61
40
A
120
230
W
650
V
8
A
16
175
-40~175
℃
-55~150
1.1
Nm
8
g
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com
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MM40G3U65BN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=1.6mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=40A, VGE=15V, TJ=25℃
IC=40A, VGE=15V, TJ=125℃
IC=40A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25℃
VCE=650V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25℃
RGint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=40A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25℃
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=25℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=25℃
TJ=125℃
TJ=150℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=40A
RG =20Ω,
VGE=±15V,
Inductive Load
TJ=125℃
TJ=150℃
TJ=125℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤6µs , VGE=15V
TJ=125℃,VCC=360V
RthJC Junction to Case Thermal Resistance （ Per IGBT）
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=8A , VGE=0V, TJ =25℃
IF=8A , VGE=0V, TJ =125℃
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=8A , VGE=0V, TJ =150℃
IF=8A , VR=400V
dIF/dt=-400A/μs
TJ =150℃
RthJCD Junction to Case Thermal Resistance （ Per Diode）
2
Min. Typ. Max. Unit
4.5
5.2
6.0
1.75 2.15
V
2.1
2.15
100 µA
10 mA
-200
200 nA
2
Ω
180
nC
1.8
nF
95
pF
20
ns
25
ns
25
ns
35
ns
40
ns
40
ns
200
ns
230
ns
240
ns
30
ns
35
ns
35
ns
1.75
mJ
1.87
mJ
0.85
mJ
0.9
mJ
230
A
0.65 K /W
Min. Typ. Max. Unit
1.75 2.05
1.4
V
1.35
140
ns
9
A
0.53
µC
0.24
mJ
3 K /W
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80
VGE=15V
60
40
MM40G3U65BN
80
60
40
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
20
25℃
150℃
0
0
1
2
3
4
VCE（V）
Figure 1. Typical Output Characteristics IGBT
80
VCE=20V
60
40
20
25℃
150℃
0
6
7
8
9
10
11
VGE（V）
Figure 3. Typical Transfer characteristics IGBT
6
VCE=400V
5
RG=20Ω
VGE=±15V
4
TJ=150℃
3
Eon
Eoff
2
1
0
0
20
40
60
80
IC（A）
Figure 5. Switching Energy vs Collector Current IGBT
3
20
TJ=150℃
0
0
1
2
3
4
5
VCE（V）
Figure 2. Typical Output Characteristics IGBT
6
VCE=400V
5
IC=40A
VGE=±15V
4
TJ=150℃
3
Eon
Eoff
2
1
0
0
20
40
60
80
100
RG（Ω）
Figure 4. Switching Energy vs Gate Resistor IGBT
100
80
RG=20Ω
60
VGE=±15V
TJ=150℃
40
20
0
0 100 200 300 400 500 600 700
VCE（V）
Figure 6. Reverse Biased Safe Operating Area IGBT
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