IGBT. MM50G3U120BMX Datasheet

MM50G3U120BMX IGBT. Datasheet pdf. Equivalent

MM50G3U120BMX Datasheet
Recommendation MM50G3U120BMX Datasheet
Part MM50G3U120BMX
Description IGBT
Feature MM50G3U120BMX; June 2020 MM50G3U120BMX Version 01 1200V 50A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in.
Manufacture MacMic
Datasheet
Download MM50G3U120BMX Datasheet





MacMic MM50G3U120BMX
June 2020
MM50G3U120BMX
Version 01
1200V 50A IGBT
RoHS Compliant
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
IC
MM50G3U120BMX 1200V 50A
VCE(sat) TJ=25°C
1.95V
TJmax
175°C
Marking
MM50G3U120BMX
Package
TO-247 Plus
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=110
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=95
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Weight
Values
Unit
1200
V
±20
83
50
A
150
535
W
1200
V
50
A
150
175
-40~175
-55~150
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM50G3U120BMX
MM50G3U120BMX
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=600V, IC=50A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=50A
RG =10Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=50A
RG =10Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=50A
RG =10Ω,
VGE=±15V,
Inductive Load
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=600V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
5.8
1.95
2.35
2.45
0.28
3.6
160
25
35
35
25
30
30
200
245
260
65
100
110
5.5
6.2
2.4
2.6
320
Max. Unit
6.5
2.4
V
100 µA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.28 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , VGE=0V, TJ =25
IF=50A , VGE=0V, TJ =125
IF=50A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=50A , VR=600V
dIF/dt=-1300A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.8
2.3
1.55
V
1.5
460
ns
52
A
12
µC
4.7
mJ
0.49 K /W



MacMic MM50G3U120BMX
100
25
80
150
60
40
MM50G3U120BMX
100
Vge=17V
Vge=15V
80
Vge=13V
Vge=11V
60
Vge=9V
40
20
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
100
VCE=20V
80
60
20
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
20
VCE=600V
16
IC=50A
VGE=±15V
TJ=150
12
40
20
25
150
0
6
7
8
9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics IGBT
20
VCE=600V
Rg=10Ω
16
VGE=±15V
TJ=150
12
8
Eon
Eoff
4
8
Eon
Eoff
4
0
0 10 20 30 40 50 60
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
125
100
Rg=10Ω
VGE=±15V
75
TJ=150
50
25
0
0
20
40
60
80 100
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0 200 400 600 800 1000 1200 1400
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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