IGBT. MM120G3T65BM Datasheet

MM120G3T65BM IGBT. Datasheet pdf. Equivalent

MM120G3T65BM Datasheet
Recommendation MM120G3T65BM Datasheet
Part MM120G3T65BM
Description IGBT
Feature MM120G3T65BM; June 2020 Version 01 MM120G3T65BM 650V 120A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip.
Manufacture MacMic
Datasheet
Download MM120G3T65BM Datasheet





MacMic MM120G3T65BM
June 2020
Version 01
MM120G3T65BM
650V 120A IGBT
RoHS Compliant
PRODUCT FEATURES
650V IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
APPLICATIONS
Motor control
UPS/PFC
General purpose inverters
1
2
3
1.Gate
2.Collector
3.Emitter
Type
VCES
MM120G3T65BM 650V
IC
120A
VCE(sat) TJ=25°C
1.6V
TJmax
175°C
Marking
MM120G3T65BM
Package
TO-247 Plus
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=110
ICpuls
Pulsed collector current,tp limited by TJmax
Ptot
Power Dissipation Per IGBT
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
TC=95
IFpuls
Diode pulsed current,tp limited by TJmax
TJmax Max. Junction Temperature
TJop
Operating Temperature
Tstg
Storage Temperature
Weight
Values
Unit
650
V
±20
200
120
A
360
750
W
650
V
120
A
360
175
-40~175
-55~150
8
g
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com



MacMic MM120G3T65BM
MM120G3T65BM
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=120A, VGE=15V, TJ=25
IC=120A, VGE=15V, TJ=125
IC=120A, VGE=15V, TJ=150
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Qg
Gate Charge
VCE=400V, IC=120A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=400V,IC=120A
RG =5.1Ω,
VGE=+15/-8V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=400V,IC=120A
RG =5.1Ω,
VGE=+15/-8V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=400V,IC=120A
RG =5.1Ω,
VGE=+15/-8V,
Inductive Load
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=400V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.3
-200
Typ.
5.3
1.6
1.9
1.95
0.55
7.2
320
60
70
70
60
65
65
190
220
230
80
140
150
6.6
7
4.7
5.1
540
Max. Unit
6.3
2
V
100 µA
5
mA
200 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.2 K /W
Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=120A , VGE=0V, TJ =25
IF=120A , VGE=0V, TJ =125
IF=120A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=120A , VR=400V
dIF/dt=-1300A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
Min. Typ. Max. Unit
1.8
2.3
1.6
V
1.55
300
ns
52
A
8.1
µC
2.4
mJ
0.4 K /W



MacMic MM120G3T65BM
240
25
200
150
160
120
MM120G3T65BM
240
200
160
120
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
80
80
40
VGE=15V
40
TJ=150
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT
240
200
VCE=20V
160
120
80
40
25
150
0
6
7
8
9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics IGBT
25
VCE=400V
Rg=5.1Ω
20
VGE=±15V
TJ=150
15
10
Eon
Eoff
5
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT
50
VCE=400V
40
IC=120A
VGE=±15V
TJ=150
30
20
Eon
Eoff
10
0
0
10
20
30
40
50
RgΩ
Figure 4. Switching Energy vs Gate Resistor IGBT
300
250
Rg=5.1Ω
200
VGE=±15V
TJ=150
150
100
50
0
0 40 80 120 160 200 240
ICA
Figure 5. Switching Energy vs Collector Current IGBT
3
0
0 100 200 300 400 500 600 700
VCEV
Figure 6. Reverse Biased Safe Operating Area IGBT





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