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FRED. MMF100S170B2B Datasheet

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FRED. MMF100S170B2B Datasheet







MMF100S170B2B FRED. Datasheet pdf. Equivalent




MMF100S170B2B FRED. Datasheet pdf. Equivalent





Part

MMF100S170B2B

Description

FRED

Manufacture

MacMic

Datasheet
Download MMF100S170B2B Datasheet


MacMic MMF100S170B2B

MMF100S170B2B; December 2011 MMF100S170B2B 1700V 100A FRED Module PRELIMINARY RoHS Complia nt PRODUCT FEATURES  Ultrafast Reve rse Recovery Time  Soft Reverse Reco very Characteristics  Low Reverse Re covery Loss  Low Forward Voltage  High Surge Current Capability  Low Inductance Package APPLICATIONS  In version Welder  Uninterruptible Powe r Supply (UPS)  Plating Power Sup.


MacMic MMF100S170B2B

ply  Ultrasonic Cleaner and Welder Converter & Chopper  Power Factor Correction (PFC) Circuit ABSOLUTE MAXI MUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Cond itions VR Maximum D.C. Reverse Voltag e VRRM Maximum Repetitive Reverse Vol tage IF(AV) Average Forward Current TC=80°C, Per Diode TC=80°C, 20KHz, Pe r Diode IF(RMS) RMS Forwar.


MacMic MMF100S170B2B

d Current TC=80°C, Per Diode Non-Repe titive Surge IFSM Forward Current t=10 ms, 50Hz, Sine t=8.3ms, 60Hz, Sine I2t I2t (For Fusing) t=10ms, 50Hz, Sine t=8.3ms, 60Hz, Sine PD Power Dissipat ion TJ Junction Temperature TSTG St orage Temperature Range Visol Insulat ion Test Voltage AC, t=1min Torque Mo dule-to-Sink Recommended(M6) Torq ue Module Electrodes R.



Part

MMF100S170B2B

Description

FRED

Manufacture

MacMic

Datasheet
Download MMF100S170B2B Datasheet




 MMF100S170B2B
December 2011
MMF100S170B2B
1700V 100A FRED Module
PRELIMINARY
RoHS Compliant
PRODUCT FEATURES
Ultrafast Reverse Recovery Time
Soft Reverse Recovery Characteristics
Low Reverse Recovery Loss
Low Forward Voltage
High Surge Current Capability
Low Inductance Package
APPLICATIONS
Inversion Welder
Uninterruptible Power Supply (UPS)
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
Power Factor Correction (PFC) Circuit
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VR
Maximum D.C. Reverse Voltage
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Forward Current
TC=80°C, Per Diode
TC=80°C, 20KHz, Per Diode
IF(RMS) RMS Forward Current
TC=80°C, Per Diode
Non-Repetitive Surge
IFSM
Forward Current
t=10ms, 50Hz, Sine
t=8.3ms, 60Hz, Sine
I2t
I2t (For Fusing)
t=10ms, 50Hz, Sine
t=8.3ms, 60Hz, Sine
PD
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature Range
Visol
Insulation Test Voltage
AC, t=1min
Torque Module-to-Sink
RecommendedM6
Torque Module Electrodes
RecommendedM6
RθJC
Weight
Thermal Resistance
Junction-to-Case
Values
1700
1700
100
75
140
1000
1100
5000
6050
568
-40 to +150
-40 to +125
3000
35
35
0.22
160
Unit
V
V
A
A
A
A
A
A2s
A2s
W
°C
°C
V
N·m
N·m
°C /W
g
MacMic Science & Technology Co., Ltd.
Version: 01
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com





 MMF100S170B2B
MMF100S170B2B
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
IRM
Reverse Leakage Current
VF
Forward Voltage
trr
Reverse Recovery Time
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Test Conditions
VR=1700V
VR=1700V, TJ=125°C
IF=100A
IF=100A, TJ=125°C
IF=1A, VR=30V, diF/dt=-200A/μs
VR=850V, IF=100A
diF/dt=-200A/μs, TJ=25°C
VR=850V, IF=100A
diF/dt=-200A/μs, TJ=125°C
VR=850V, IF=100A
diF/dt=-200A/μs, TJ=125°C
Min. Typ. Max. Unit
--
--
5
mA
--
--
20 mA
-- 1.8 2.25 V
-- 1.95 --
V
-- 105 --
ns
-- 500 --
ns
--
36
--
A
-- 1.25 --
μs
42
--
A
450 --
ns
-- 120 --
A
200
160
120
TJ =25°C
80
40
TJ =125°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VFV
Figure1. Forward Voltage Drop vs Forward Current
180
150
VR=850V
TJ =125°C
120
90
IF=200A
60
IF=100A
IF=50A
30
0
0
200 400 600 800 1000
diF/dtA/μs
Figure3. Reverse Recovery Current vs diF/dt
1.4
VR=850V
1.2
TJ =125°C
1.0
0.8
0.6 IF=200A
IF=100A
0.4
IF=50A
0.2
0
0
200 400 600 800 1000
diF/dtA/μs
Figure2. Reverse Recovery Time vs diF/dt
75
VR=850V
TJ =125°C
60
45
30
IF=200A
IF=100A
IF=50A
15
0
0
200 400 600 800 1000
diF/dtA/μs
Figure4. Reverse Recovery Charge vs diF/dt





 MMF100S170B2B
MMF100S170B2B
1.2
1.0
0.8 IRRM
0.6
Qrr
0.4 trr
0.2
0
0 25 50 75 100 125 150
TJ (°C)
Figure5. Dynamic Parameters vs Junction Temperature
1
10-1
10-2
10-3
DDuuttyy
00..55
00..22
00..11
00..0055
SSiinnggllee PPuullssee
10-410-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure6. Transient Thermal Impedance
Dimensions (mm)
Figure7. Package Outline



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