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PIM. MMG50HD120XB6TC Datasheet

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PIM. MMG50HD120XB6TC Datasheet






MMG50HD120XB6TC PIM. Datasheet pdf. Equivalent




MMG50HD120XB6TC PIM. Datasheet pdf. Equivalent





Part

MMG50HD120XB6TC

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50HD120XB6TC Datasheet


MacMic MMG50HD120XB6TC

MMG50HD120XB6TC; August 2018 PRODUCT FEATURES □ High le vel of integration □ IGBT CHIP(Trench +Field Stop technology) □ Low saturat ion voltage and positive temperature co efficient □ Fast switching and short tail current □ Free wheeling diodes w ith fast and soft reverse recovery □ Industry standard package with insulate d copper base plate and soldering pins for PCB mounting □ Temperature.


MacMic MMG50HD120XB6TC

sense included APPLICATIONS □ AC moto r control □ Motion/servo control □ Inverter and power supplies MMG50HD120 XB6TC Version 01 1200V 50A PIM Module RoHS Compliant Rectifier+Brake+Invert er IGBT-inverter ABSOLUTE MAXIMUM RAT INGS(T C =25°C unless otherwise specif ied) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=.


MacMic MMG50HD120XB6TC

25℃ IC DC Collector Current ICM Re petitive Peak Collector Current TC=25 , TJmax=175℃ TC=100℃, TJmax=175 tp=1ms Ptot Power Dissipation Per I GBT TC=25℃, TJmax=175℃ Values Un it 1200 V ±20 77 50 A 100 278 W Diode-inverter ABSOLUTE MAXIMUM RATI NGS (T C =25°C unless otherwise specif ied) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage .



Part

MMG50HD120XB6TC

Description

PIM

Manufacture

MacMic

Datasheet
Download MMG50HD120XB6TC Datasheet




 MMG50HD120XB6TC
August 2018
PRODUCT FEATURES
High level of integration
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG50HD120XB6TC
Version 01
1200V 50A PIM Module
RoHS Compliant
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
77
50
A
100
278
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
50
A
100
560
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1





 MMG50HD120XB6TC
MMG50HD120XB6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=50A, VGE=15V, TJ=25
IC=50A, VGE=15V, TJ=125
IC=50A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=50A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=50A
RG =10,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=600V
RthJC
Junction to Case Thermal Resistance (Per IGBT)
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=50A , VGE=0V, TJ =25
VF
Forward Voltage
IF=50A , VGE=0V, TJ =125
IF=50A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=50A , VR=600V
dIF/dt=-1500A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
5.0
-400
Typ.
5.8
1.85
2.15
2.25
3.6
0.27
3.85
160
35
40
40
35
40
40
250
290
310
150
210
230
8
8.5
4
4.3
195
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.54 K /W
Min.
Typ.
Max. Unit
1.7
2.15
1.65
V
1.65
390
ns
60
A
9.5
µC
3.4
mJ
0.81 K /W
2





 MMG50HD120XB6TC
MMG50HD120XB6TC
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=50A , TJ =25
IF=50A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1600
V
50
75
80
A
480
527
1152
1152
A2S
Min. Typ. Max. Unit
1.1
1.25 V
1.05
V
50
µA
1
mA
0.8 K /W
Values
Unit
1200
V
±20
54
35
A
70
208
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
Unit
1200
V
25
A
50
110
A2S
3



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