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IGBT. MMG75J120U6TN Datasheet

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IGBT. MMG75J120U6TN Datasheet






MMG75J120U6TN IGBT. Datasheet pdf. Equivalent




MMG75J120U6TN IGBT. Datasheet pdf. Equivalent





Part

MMG75J120U6TN

Description

IGBT



Feature


August 2019 MMG75J120U6TN Version 01 1200V 75A IGBT Module RoHS Compliant P RODUCT FEATURES □ IGBT3 Chip(Trench+F ield Stop technology) □ Low switching losses □ Low saturation voltage and positive temperature coefficient □ Fa st switching and short tail current □ Free wheeling diodes with fast and sof t reverse recovery □ Popular SOT-227 Package APPLICATIONS □ AC mot.
Manufacture

MacMic

Datasheet
Download MMG75J120U6TN Datasheet


MacMic MMG75J120U6TN

MMG75J120U6TN; or control □ Motion/servo control □ Inverter and power supplies IGBT ABSO LUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter /Test Conditions VCES Collector Emitte r Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=2 5℃,TJmax=150℃ TC=80℃,TJmax=150℃ ICM Repetitive Peak Collector Curren t tp=1ms Ptot Power Dissipatio.


MacMic MMG75J120U6TN

n Per IGBT TC=25℃,TJmax=150℃ Value s Unit 1200 V ±20 105 75 A 150 348 W Diode ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified ) Symbol Parameter/Test Conditions V RRM Repetitive Reverse Voltage TJ=25 IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Valu es Unit 1200 V 75 A 150 .


MacMic MMG75J120U6TN

1150 A2S MacMic Science & Technology Co., Ltd. 1 Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jian gsu Province, P. R .of China Tel.:+8 6-519-85163708 Fax:+86-519-85162291 P ost Code:213022 Website:www.macmics t.com MMG75J120U6TN IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless othe rwise specified) Symbol Parameter/Tes t Conditions VGE(th) Gate Em.

Part

MMG75J120U6TN

Description

IGBT



Feature


August 2019 MMG75J120U6TN Version 01 1200V 75A IGBT Module RoHS Compliant P RODUCT FEATURES □ IGBT3 Chip(Trench+F ield Stop technology) □ Low switching losses □ Low saturation voltage and positive temperature coefficient □ Fa st switching and short tail current □ Free wheeling diodes with fast and sof t reverse recovery □ Popular SOT-227 Package APPLICATIONS □ AC mot.
Manufacture

MacMic

Datasheet
Download MMG75J120U6TN Datasheet




 MMG75J120U6TN
August 2019
MMG75J120U6TN
Version 01
1200V 75A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
Low switching losses
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Popular SOT-227 Package
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=150
TC=80,TJmax=150
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=150
Values
Unit
1200
V
±20
105
75
A
150
348
W
Diode
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
75
A
150
1150
A2S
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG75J120U6TN
MMG75J120U6TN
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=75A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
10
0.7
5.3
200
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
300
Max. Unit
6.5
2.15 V
1
mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.36 K /W
Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=75A , VR=600V
dIF/dt=-2000A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.65 2.15
V
1.65
300
ns
83
A
13
µC
6.5
mJ
0.6 K /W
2




 MMG75J120U6TN
MMG75J120U6TN
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
to heatsink
Torque
to terminal
RecommendedM4
RecommendedM4
Weight
Values
Unit
150
-40~125
-40~125
3000
V
0.7~1.1
Nm
0.7~1.1
Nm
26.5
g
150
25
125
125
100
75
50
25
VGE=15V
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT
3
150
Vge=17V
125
Vge=15V
Vge=13V
100
Vge=11V
75
Vge=9V
50
25
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT






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