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IGBT. MMG75J120UZ Datasheet

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IGBT. MMG75J120UZ Datasheet






MMG75J120UZ IGBT. Datasheet pdf. Equivalent




MMG75J120UZ IGBT. Datasheet pdf. Equivalent





Part

MMG75J120UZ

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG75J120UZ 1200V 75A IG BT Module RoHS Compliant APPLICATIONS □ Invertor Convertor □ Welder SMPS and UPS □ Induction Heating IGB.
Manufacture

MacMic

Datasheet
Download MMG75J120UZ Datasheet


MacMic MMG75J120UZ

MMG75J120UZ; T ABSOLUTE MAXIMUM RATINGS Symbol Par ameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Curre nt TC=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot P ower Dissipation Per IGBT T C =25°C u nless otherwise specified Values Unit 1200 V ±20 105 75 A 150 630 W MODULE CHARACTERISTICS S.


MacMic MMG75J120UZ

ymbol Parameter/Test Conditions T C =2 5°C unless otherwise specified Values Unit TJmax Max. Junction Temperatur e 150 TJop Operating Temperature -4 0~125 °C Tstg Visol Storage Tempera ture Isolation Breakdown Voltage AC, 5 0Hz(R.M.S), t=1minute -40~125 3000 V Torque to heatsink to terminal Reco mmended(M4) Recommended(M4) 0. 7~1.1 Nm 0.7~1.1 Nm Weig.


MacMic MMG75J120UZ

ht 26.5 g MacMic Science & Technology Co., Ltd. 1 Add:#18, Hua Shan Zhon g Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China Tel.:+ 86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmic st.com MMG75J120UZ IGBT ELECTRICAL CH ARACTERISTICS Symbol Parameter/Test C onditions T C =25°C unless otherwise specified Min. Typ. Max. Unit.

Part

MMG75J120UZ

Description

IGBT



Feature


April 2015 PRODUCT FEATURES □ High Sho rt Circuit Capability □ Free wheeling diodes with fast and soft reverse reco very □ VCE(sat) with positive tempera ture coefficient □ Ultra Low Loss,Hig h Ruggedness □ Popular SOT-227 Packag e Version 01 MMG75J120UZ 1200V 75A IG BT Module RoHS Compliant APPLICATIONS □ Invertor Convertor □ Welder SMPS and UPS □ Induction Heating IGB.
Manufacture

MacMic

Datasheet
Download MMG75J120UZ Datasheet




 MMG75J120UZ
April 2015
PRODUCT FEATURES
High Short Circuit Capability
Free wheeling diodes with fast and soft reverse recovery
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Popular SOT-227 Package
Version 01
MMG75J120UZ
1200V 75A IGBT Module
RoHS Compliant
APPLICATIONS
Invertor Convertor
Welder SMPS and UPS
Induction Heating
IGBT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
V
±20
105
75
A
150
630
W
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
Max. Junction Temperature
150
TJop
Operating Temperature
-40~125
°C
Tstg
Visol
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
-40~125
3000
V
Torque
to heatsink
to terminal
RecommendedM4
RecommendedM4
0.7~1.1
Nm
0.7~1.1
Nm
Weight
26.5
g
MacMic Science & Technology Co., Ltd.
1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG75J120UZ
MMG75J120UZ
IGBT
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3mA
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=75A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =10,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0 6.2
1.8
2.0
-400
3
0.75
5.52
260
100
110
60
60
410
450
60
75
5.5
7
4.8
7.0
420
7.0
2.4 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.2 K /W
150
25°C
125
125°C
100
75
50
25
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics
IGBT
150
125
100
75
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
50
TJ=125°C
25
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT
2




 MMG75J120UZ
150
125
VCE=20V
100
75
50
25°C
25
125°C
0
7 8 9 10 11 12 13
VGEV
Figure 3. Typical Transfer characteristics
IGBT
MMG75J120UZ
20
VCE=600V
16
IC=75A
VGE=±15V
TJ=125°C
12
8
4
Eon
Eoff
0
0 10 20 30 40 50
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT
20
VCE=600V
16
Rg=10Ω
VGE=±15V
TJ=125°C
12
Eon
8
Eoff
4
0
0 25 50 75 100 125 150
ICA
Figure 5. Switching Energy vs Collector Current
IGBT
175
150
125
100
75
VRTJGg==E1=12±051Ω°5CV
module
50
25
0
0 200 400 600 800 1000 1200 1400
VCEV
Figure 6. Reverse Biased Safe Operating Area
IGBT
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC()
Figure 7. Collector Current vs Case temperature
1
0.1
0.01
IGBT
0.001
0.001 0.01
0.1
1
10
Rectangular Pulse Duration (s)
Figure 8. Transient Thermal Impedance of
IGBT
3






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