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IGBT. MMG75W120XB6TN Datasheet

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IGBT. MMG75W120XB6TN Datasheet






MMG75W120XB6TN IGBT. Datasheet pdf. Equivalent




MMG75W120XB6TN IGBT. Datasheet pdf. Equivalent





Part

MMG75W120XB6TN

Description

IGBT



Feature


May 2015 MMG75W120XB6TN 1200V 75A PIM Module Version 01 RoHS Compliant PRO DUCT FEATURES □ High level of integra tion □ IGBT3 CHIP(Trench+Field Stop t echnology) □ Low saturation voltage a nd positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry stan dard package with insulated co.
Manufacture

MacMic

Datasheet
Download MMG75W120XB6TN Datasheet


MacMic MMG75W120XB6TN

MMG75W120XB6TN; pper base plate and soldering pins for P CB mounting □ Temperature sense inclu ded APPLICATIONS □ AC motor control Motion/servo control □ Inverter an d power supplies Rectifier+Brake+Inver ter IGBT-inverter ABSOLUTE MAXIMUM RA TINGS(T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VCES Collector Emitter Voltage TJ= 25℃ VGES Gate Emitter Vol.


MacMic MMG75W120XB6TN

tage IC DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collect or Current tp=1ms Ptot Power Dissipa tion Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless oth erwise specified) Symbol Parameter/Te st Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average For ward Current TC=25℃ IFRM Repetitiv e Peak Forward Current tp=.


MacMic MMG75W120XB6TN

1ms I2t TJ =125℃, t=10ms, VR=0V Val ues 1200 ±20 105 75 150 368 Unit V A W Values 1200 75 150 1150 Unit V A A2 S MacMic Science & Technology Co., Ltd . Add:#18, Hua Shan Zhong Lu, New Dis trict, Changzhou City, Jiangsu Province , P. R .of China Tel.:+86-519-8516370 8 Fax:+86-519-85162291 Post Code:21 3022 Website:www.macmicst.com 1 MMG7 5W120XB6TN IGBT-inverter ELECT.

Part

MMG75W120XB6TN

Description

IGBT



Feature


May 2015 MMG75W120XB6TN 1200V 75A PIM Module Version 01 RoHS Compliant PRO DUCT FEATURES □ High level of integra tion □ IGBT3 CHIP(Trench+Field Stop t echnology) □ Low saturation voltage a nd positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry stan dard package with insulated co.
Manufacture

MacMic

Datasheet
Download MMG75W120XB6TN Datasheet




 MMG75W120XB6TN
May 2015
MMG75W120XB6TN
1200V 75A PIM Module
Version 01
RoHS Compliant
PRODUCT FEATURES
High level of integration
IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
1200
±20
105
75
150
368
Unit
V
A
W
Values
1200
75
150
1150
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMG75W120XB6TN
MMG75W120XB6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=3mA
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
IC=75A, VGE=15V, TJ=25
IC=75A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=75A , VGE=±15V
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=75A
RG =4.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-400
Typ.
5.8
1.7
1.9
10
0.7
5.3
0.2
260
290
30
50
420
520
70
90
6.6
9.4
6.8
8.0
Max. Unit
6.5
2.15 V
100 µA
10 mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
300
A
0.34 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , VGE=0V, TJ=25
IF=75A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=75A , VR=600V
dIF/dt=-2000A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.65
1.65
300
85
13
6.5
Max. Unit
2.15
V
ns
A
µC
mJ
0.56 K /W
2




 MMG75W120XB6TN
MMG75W120XB6TN
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IFRMS
IRMS
R.M.S. Forward Current Per Diode
R.M.S. Current at rectifier output
TC=80
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
1600
80
110
500
550
1250
1255
Unit
V
A
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=75A , TJ =25
IF=75A , TJ =125
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=125
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.1
1.05
Max. Unit
1.35 V
V
50 µA
1 mA
0.6 K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ=125, t=10ms, VR=0V
Values
1200
±20
55
40
80
195
Unit
V
A
W
Values
1200
25
50
200
Unit
V
A
A2S
3






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