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Power MOSFET. CSD25310Q2 Datasheet

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Power MOSFET. CSD25310Q2 Datasheet






CSD25310Q2 MOSFET. Datasheet pdf. Equivalent




CSD25310Q2 MOSFET. Datasheet pdf. Equivalent





Part

CSD25310Q2

Description

P-Channel Power MOSFET



Feature


.
Manufacture

Texas Instruments

Datasheet
Download CSD25310Q2 Datasheet


Texas Instruments CSD25310Q2

CSD25310Q2; .


Texas Instruments CSD25310Q2

.


Texas Instruments CSD25310Q2

.

Part

CSD25310Q2

Description

P-Channel Power MOSFET



Feature


.
Manufacture

Texas Instruments

Datasheet
Download CSD25310Q2 Datasheet




 CSD25310Q2
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CSD25310Q2
SLPS459A – JANUARY 2014 – REVISED JUNE 2014
CSD25310Q2 20 V P-Channel NexFET™ Power MOSFETs
1 Features
1 Ultra-Low Qg and Qgd
• Low On Resistance
• Low Thermal Resistance
• Pb-Free
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
2 Applications
• Battery Management
• Load Management
• Battery Protection
3 Description
This 19.9 mΩ, –20 V P-Channel device is designed to
deliver the lowest on resistance and gate charge in
the smallest outline possible with excellent thermal
characteristics in an ultra-low profile. Its low on
resistance coupled with an extremely small footprint
in a SON 2 mm × 2 mm plastic package make the
device ideal for battery operated space constrained
operations.
Top View
S1
S
S2
6S
5S
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–20
3.6
0.5
VGS = –1.8 V
VGS = –2.5 V
VGS = –4.5 V
-0.85
59.0
27.0
19.9
UNIT
V
nC
nC
m
m
m
V
Device
CSD25310Q2
CSD25310Q2T
.
Ordering Information(1)
Media
Qty
Package
7-Inch Reel
7-Inch Reel
3000 SON 2 x 2 mm
250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limit)
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
Tstg Temperature Range
VALUE
–20
±8
–20
–9.6
48
2.9
UNIT
V
V
A
A
A
W
–55 to 150 °C
(1) RθJA = 43°C/W on 1 in² Cu (2 oz.) on .060-inch thick FR4
PCB.
(2) Pulse duration 10 μs, duty cycle 2%
G3
D
4D
80
72
64
56
48
40
32
24
16
8
0
0
P0112-01
RDS(on) vs VGS
TC = 25°C,I D = −5A
TC = 125°C,I D = −5A
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
5
4.5
ID = −5A
VDS = −10V
4
3.5
3
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD25310Q2
CSD25310Q2
SLPS459A – JANUARY 2014 – REVISED JUNE 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics.......................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q2 Package Dimensions .......................................... 9
7.2 Recommended PCB Pattern................................... 10
7.3 Recommended Stencil Pattern ............................... 10
7.4 Q2 Tape and Reel Information................................ 11
4 Revision History
Changes from Original (January 2014) to Revision A
Page
• Revised "Pb-Free Terminal Plating" to Only State "Pb-Free" ................................................................................................ 1
• Added small reel option to the Ordering Information Table ................................................................................................... 1
2
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Copyright © 2014, Texas Instruments Incorporated




 CSD25310Q2
www.ti.com
5 Specifications
CSD25310Q2
SLPS459A – JANUARY 2014 – REVISED JUNE 2014
5.1 Electrical Characteristics
TA = 25°C, unless otherwise specified
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On Resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Series Gate Resistance
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0 V, ID = –250 μA
VGS = 0 V, VDS = –16 V
VDS = 0 V, VGS = –8 V
VDS = VGS, IDS = –250 μA
VGS = –1.8 V, IDS = –5 A
VGS = –2.5 V, IDS = –5 A
VGS = –4.5 V, IDS = –5 A
VDS = –16 V, IDS = –5 A
VGS = 0 V, VDS = –10 V, f = 1 MHz
VDS = –10 V, IDS = –5 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V, IDS = –5 A
RG = 2
IDS = –5 A, VGS = 0 V
VDD = –10 V, IF = –5 A, di/dt = 200 A/μs
MIN TYP MAX UNIT
–20
V
–1 μA
–100 nA
–0.55 –0.85 –1.10 V
59.0 89.0 m
27.0 32.5 m
19.9 23.9 m
34
S
504 655 pF
281 365 pF
16.7 21.7 pF
1.9
3.6 4.7 nC
0.5
nC
1.1
nC
0.6
nC
5.0
nC
8
ns
15
ns
15
ns
5
ns
–0.8 –1.0 V
9.2
nC
13
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJC
RθJA
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN TYP MAX UNIT
4.5
°C/W
55
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: CSD25310Q2
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