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Power MOSFET. CSD25404Q3T Datasheet

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Power MOSFET. CSD25404Q3T Datasheet






CSD25404Q3T MOSFET. Datasheet pdf. Equivalent




CSD25404Q3T MOSFET. Datasheet pdf. Equivalent





Part

CSD25404Q3T

Description

P-Channel Power MOSFET



Feature


.
Manufacture

Texas Instruments

Datasheet
Download CSD25404Q3T Datasheet


Texas Instruments CSD25404Q3T

CSD25404Q3T; .


Texas Instruments CSD25404Q3T

.


Texas Instruments CSD25404Q3T

.

Part

CSD25404Q3T

Description

P-Channel Power MOSFET



Feature


.
Manufacture

Texas Instruments

Datasheet
Download CSD25404Q3T Datasheet




 CSD25404Q3T
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Folder
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Buy
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CSD25404Q3
SLPS570 – NOVEMBER 2015
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Low RDS(on)
• Halogen Free
• RoHS Compliant
• Pb Free Terminal Plating
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
3 Description
This –20 V, 5.5 mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion load
management applications with a SON 3.3 mm × 3.3
mm package that offers an excellent thermal
performance for the size of the device.
Top View
D1
D2
8S
7S
D3
4
G
6S
S
5
S
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
RDS(on) Drain-to-source on resistance
Vth
Threshold voltage
TYPICAL VALUE
–20
10.9
2.2
VGS = –1.8 V
VGS = –2.5 V
VGS = –4.5 V
–0.9
40
10.1
5.5
UNIT
V
nC
nC
m
m
m
V
DEVICE
CSD25404Q3
CSD25404Q3T
Ordering Information(1)
QTY MEDIA
PACKAGE
2500 13-Inch Reel SON 3.3 mm × 3.3
250 7-Inch Reel mm Plastic Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-source voltage
VGS Gate-to-source voltage
Continuous drain current, TC = 25°C
ID
Continuous drain current (package limit)
Continuous drain current(1)
IDM Pulsed drain current(2)
Power dissipation(1)
PD
Power dissipation, TC = 25°C
TJ, Operating junction,
Tstg storage temperature
VALUE
–20
±12
–104
–60
–18
–240
2.8
96
UNIT
V
V
A
A
W
–55 to 150 °C
(1) RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4
PCB.
(2) Max RθJC = 1.3, pulse duration 100 µs, duty cycle 1%.
RDS(on) vs VGS
24
TC = 25°C, I D = -10 A
21
TC = 125°C, I D = -10 A
18
15
12
9
6
3
0
0
2
4
6
8
10
12
-VGS - Gate-To-Source Voltage (V)
D007
8
ID = -10 A
7 VDS = -10 V
6
5
4
3
2
1
0
024
Gate Charge
6 8 10 12 14 16 18 20
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD25404Q3T
CSD25404Q3
SLPS570 – NOVEMBER 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD25404Q3 Package Dimensions......................... 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening ............................... 9
7.4 Q3 Tape and Reel Information................................ 10
4 Revision History
DATE
November 2015
REVISION
*
NOTES
Initial release.
2
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Product Folder Links: CSD25404Q3
Copyright © 2015, Texas Instruments Incorporated




 CSD25404Q3T
www.ti.com
5 Specifications
CSD25404Q3
SLPS570 – NOVEMBER 2015
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-source voltage
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RDS(on) Drain-to-source on resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
RG
Series gate resistance
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate to drain
Qgs
Gate charge gate to source
Qg(th)
Gate charge at Vth
QOSS
Output charge
td(on)
Turn on delay time
tr
Rise time
td(off)
Turn off delay time
tf
Fall time
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
TEST CONDITIONS
VGS = 0 V, ID = –250 μA
VGS = 0 V, VDS = –16 V
VDS = 0 V, VGS = ±12 V
VDS = VGS, ID = –250 μA
VGS = –1.8 V, ID = –1 A
VGS = –2.5 V, ID = –10 A
VGS = –4.5 V, ID = –10 A
VDS = –10 V, ID = –10 A
VGS = 0 V, VDS = –10 V,
ƒ = 1 MHz
VDS = –10 V, ID = –10 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V,
ID = –10 A , RG = 5
IS = –10 A, VGS = 0 V
VDS = –10 V, IF = –10 A,
di/dt = 200 A/μs
MIN TYP MAX UNIT
–20
V
–1 μA
–100 nA
–0.65 –0.90 –1.15 V
40 150 m
10.1 12.1 m
5.5 6.5 m
47
S
1630 2120 pF
902 1170 pF
52
68 pF
0.8 2.4
10.8 14.1 nC
2.2
nC
2.8
nC
1.5
nC
9.0
nC
13
ns
8
ns
35
ns
13
ns
–0.8
–1
V
20.5
nC
26
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJC
RθJA
Junction-to-case thermal resistance(1)
Junction-to-ambient thermal resistance(1)(2)
MIN TYP MAX UNIT
1.3 °C/W
55 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD25404Q3
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