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Power MOSFET. CSD25480F3T Datasheet

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Power MOSFET. CSD25480F3T Datasheet






CSD25480F3T MOSFET. Datasheet pdf. Equivalent




CSD25480F3T MOSFET. Datasheet pdf. Equivalent





Part

CSD25480F3T

Description

P-Channel Power MOSFET



Feature


Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD25480F3 SLPS578A – APRIL 2 016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ul tra-Low Qg and Qgd • Ultra-Small Foot print – 0.73 mm × 0.64 mm • Low Pr ofile – 0.35-mm Max Height • Integr ated ESD Protection Diode • Lead and Halo.
Manufacture

Texas Instruments

Datasheet
Download CSD25480F3T Datasheet


Texas Instruments CSD25480F3T

CSD25480F3T; gen Free • RoHS Compliant 2 Applicatio ns • Optimized for Load Switch Applic ations • Optimized for General Purpos e Switching Applications • Battery Ap plications • Handheld and Mobile Appl ications 3 Description This –20-V, 11 0-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile a pplications. This technology is c.


Texas Instruments CSD25480F3T

apable of replacing standard small signa l MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = 25°C VDS Drain-to-Sour ce Voltage Qg Gate Charge Total (–4 .5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VAL UE –20 0.7 0.10 VGS = –1.8 V 420 VG S = –2.5 V 203 VGS = –4.5.


Texas Instruments CSD25480F3T

V 132 VGS = –8.0 V 110 –0.95 UNIT V nC nC mΩ V DEVICE CSD25480F3 CSD25 480F3T Device Information(1) QTY MED IA PACKAGE 3000 250 7-Inch Reel Fem to 0.73-mm × 0.64-mm Land Grid Array ( LGA) SHIP Tape and Reel (1) For all a vailable packages, see the orderable ad dendum at the end of the data sheet. A bsolute Maximum Ratings TA = 25°C (un less otherwise stated) VD.

Part

CSD25480F3T

Description

P-Channel Power MOSFET



Feature


Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD25480F3 SLPS578A – APRIL 2 016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ul tra-Low Qg and Qgd • Ultra-Small Foot print – 0.73 mm × 0.64 mm • Low Pr ofile – 0.35-mm Max Height • Integr ated ESD Protection Diode • Lead and Halo.
Manufacture

Texas Instruments

Datasheet
Download CSD25480F3T Datasheet




 CSD25480F3T
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CSD25480F3
SLPS578A – APRIL 2016 – REVISED AUGUST 2017
CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET
1 Features
1 Low On-Resistance
• Ultra-Low Qg and Qgd
• Ultra-Small Footprint
– 0.73 mm × 0.64 mm
• Low Profile
– 0.35-mm Max Height
• Integrated ESD Protection Diode
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This –20-V, 110-mΩ, P-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–20
0.7
0.10
VGS = –1.8 V 420
VGS = –2.5 V 203
VGS = –4.5 V 132
VGS = –8.0 V 110
–0.95
UNIT
V
nC
nC
m
V
DEVICE
CSD25480F3
CSD25480F3T
Device Information(1)
QTY
MEDIA
PACKAGE
3000
250
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated)
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(1)(2)
PD
Power Dissipation(1)
Human-Body Model (HBM)
V(ESD) Charged-Device Model (CDM)
VALUE
–20
–12
–1.7
–10.6
500
4000
2000
UNIT
V
V
A
A
mW
V
TJ,
Operating Junction,
Tstg Storage Temperature
–55 to 150 °C
(1) Typical RθJA = 255°C/W mounted on FR4 material with
minimum Cu mounting area.
(2) Pulse duration 100 μs, duty cycle 1%.
Typical Part Dimensions...............
0.35 mm
0.64 mm
0.73 mm
Top View.........
G
D
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




 CSD25480F3T
CSD25480F3
SLPS578A – APRIL 2016 – REVISED AUGUST 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
Changes from Original (April 2016) to Revision A
Page
• Added the Receiving Notification of Documentation Updates section in Device and Documentation Support ..................... 7
• Updated the Recommended Stencil Pattern .......................................................................................................................... 9
2
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Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: CSD25480F3




 CSD25480F3T
www.ti.com
5 Specifications
CSD25480F3
SLPS578A – APRIL 2016 – REVISED AUGUST 2017
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-source voltage
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RDS(on) Drain-to-source on-resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
RG
Series gate resistance
Qg
Gate charge total (–4.5 V)
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turnon delay time
tr
Rise time
td(off)
Turnoff delay time
tf
Fall time
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0 V, IDS = –250 μA
VGS = 0 V, VDS = –16 V
VDS = 0 V, VGS = –12 V
VDS = VGS, IDS = –250 μA
VGS = –1.8 V, IDS = –0.1 A
VGS = –2.5 V, IDS = –0.4 A
VGS = –4.5 V, IDS = –0.4 A
VGS = –8 V, IDS = –0.4 A
VDS = –10 V, IDS = –0.4 A
VGS = 0 V, VDS = –10 V,
ƒ = 1 MHz
VDS = –10 V, IDS = –0.4 A
VDS = –10 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 10
–20
V
–50 nA
–25 nA
–0.70 –0.95 –1.20 V
420
840
203
260
m
132
159
110
132
8.0
S
119
155 pF
48
62 pF
3.6
4.7 pF
16
0.70 0.91 nC
0.10
nC
0.26
nC
0.15
nC
1.3
nC
9
ns
5
ns
13
ns
7
ns
ISD = –0.4 A, VGS = 0 V
VDS= –10 V, IF = –0.4 A, di/dt = 100 A/μs
–0.78
1.2
6.4
–1.0 V
nC
ns
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-ambient thermal resistance(1)
Junction-to-ambient thermal resistance(2)
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
TYPICAL VALUES
90
255
UNIT
°C/W
Copyright © 2016–2017, Texas Instruments Incorporated
Product Folder Links: CSD25480F3
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