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IGBT. MMG150B065PD6TC Datasheet

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IGBT. MMG150B065PD6TC Datasheet







MMG150B065PD6TC IGBT. Datasheet pdf. Equivalent




MMG150B065PD6TC IGBT. Datasheet pdf. Equivalent





Part

MMG150B065PD6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150B065PD6TC Datasheet


MacMic MMG150B065PD6TC

MMG150B065PD6TC; .


MacMic MMG150B065PD6TC

.


MacMic MMG150B065PD6TC

.



Part

MMG150B065PD6TC

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150B065PD6TC Datasheet




 MMG150B065PD6TC
April 2019
MMG150B065PD6TC
650V 150A Three Level Inverter Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Low switching losses and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
3-Level-Applications
Solar Applications
UPS Systems
IGBT(T1T2T3T4)
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=65,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
650
V
±20
180
150
A
300
441
W
Diode(D1D2D3D4D5D6)
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
650
V
150
A
300
1800
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com





 MMG150B065PD6TC
MMG150B065PD6TC
IGBT(T1T2T3T4)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
IC=150A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25
VCE=650V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=150A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=150A
RG =3.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=150A
RG =3.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=150A
RG =3.0,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Diode(D1D2D3D4D5D6)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=150A , VGE=0V, TJ=25
VF
Forward Voltage
IF=150A , VGE=0V, TJ=125
IF=150A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=300V
dIF/dt=-2800A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
5.0
-400
Typ.
6.0
1.55
1.75
1.8
2
0.7
9.7
400
60
70
50
50
290
340
55
60
1.9
2.6
2.9
4.1
4.9
5.3
700
Max. Unit
6.5
2.0
V
1
mA
5
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.34 K /W
Min. Typ. Max. Unit
1.7
2.1
1.55
V
1.45
125
ns
120
A
12.8
µC
2.9
mJ
0.6 K /W
2





 MMG150B065PD6TC
MMG150B065PD6TC
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
3~5
Nm
300
g
300
25
150
200
100
VGE=15V
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT
3
300
Vge=17V
Vge=15V
Vge=13V
200
Vge=11V
Vge=9V
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT



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