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IGBT. MMG150S060B6EN Datasheet

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IGBT. MMG150S060B6EN Datasheet






MMG150S060B6EN IGBT. Datasheet pdf. Equivalent




MMG150S060B6EN IGBT. Datasheet pdf. Equivalent





Part

MMG150S060B6EN

Description

IGBT



Feature


March 2011 MMG150S060B6EN 600V 150A IG BT Module PRELIMINARY RoHS Compliant FEATURES □ High short circuit capabi lity,self limiting short circuit curren t □ VCE(sat) with positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching a.
Manufacture

MacMic

Datasheet
Download MMG150S060B6EN Datasheet


MacMic MMG150S060B6EN

MMG150S060B6EN; pplication □ Medical applications □ Motion/servo control □ UPS systems G S Series Module ABSOLUTE MAXIMUM RATIN GS Symbol Parameter IGBT VCES Coll ector - Emitter Voltage VGES Gate - E mitter Voltage IC DC Collector Curren t ICM Ptot Diode VRRM Repetitive Peak Collector Current Power Dissipation Pe r IGBT Repetitive Reverse Voltage IF(A V) Average Forward Curr.


MacMic MMG150S060B6EN

ent IFRM Repetitive Peak Forward Curre nt I2t TC=25°C unless otherwise spec ified Test Conditions Values Unit T Vj=25°C TC=25°C TC=60°C tp=1ms 600 V ±20 V 225 A 150 A 300 A 50 0 W TVj=25°C 600 V TC=25°C 225 A TC=60°C 150 A tp=1ms 300 A T Vj =125°C, t=10ms, VR=0V 2000 A2s M acMic Science & Technology Co., Ltd. V ersion: 1 Add:#18, Hua Sha.


MacMic MMG150S060B6EN

n Zhong Lu, New District, Changzhou City , Jiangsu Province, P. R .of China Tel .:+86-519-85163708 Fax:+86-519-8516 2291 Post Code:213022 Website:www.m acmicst.com MMG150S060B6EN ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C u nless otherwise specified Symbol Para meter Test Conditions IGBT VGE(th) G ate - Emitter Threshold Voltage VCE=VGE , IC=2.4mA VCE(sat) Colle.

Part

MMG150S060B6EN

Description

IGBT



Feature


March 2011 MMG150S060B6EN 600V 150A IG BT Module PRELIMINARY RoHS Compliant FEATURES □ High short circuit capabi lity,self limiting short circuit curren t □ VCE(sat) with positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching a.
Manufacture

MacMic

Datasheet
Download MMG150S060B6EN Datasheet




 MMG150S060B6EN
March 2011
MMG150S060B6EN
600V 150A IGBT Module
PRELIMINARY
RoHS Compliant
FEATURES
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Ptot
Diode
VRRM
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
TVj=25°C
TC=25°C
TC=60°C
tp=1ms
600
V
±20
V
225
A
150
A
300
A
500
W
TVj=25°C
600
V
TC=25°C
225
A
TC=60°C
150
A
tp=1ms
300
A
TVj =125°C, t=10ms, VR=0V
2000
A2s
MacMic Science & Technology Co., Ltd.
Version: 1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG150S060B6EN
MMG150S060B6EN
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=2.4mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=150A, VGE=15V, TVj=25°C
IC=150A, VGE=15V, TVj=125°C
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=600V, VGE=0V, TVj=25°C
VCE=600V, VGE=0V, TVj=125°C
VCE=0V,VGE±15V, TVj=125°C
RGint
Qge
Integrated Gate Resistor
Gate Charge
VCE=300V, IC=150A , VGE=±15V
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
td(off)
Turn - off Delay Time
tf
Fall Time
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
Eon
Turn - on Energy
Eoff
Turn - off Energy
VCC=300V,IC=150A,
RG =3.3Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
ISC
RthJC
Short Circuit Current
tpsc6µS , VGE=15V
TVj=125°C,VCC=360V
Junction-to-Case Thermal Resistance Per IGBT
Diode
VF
Forward Voltage
IF=150A , VGE=0V, TVj =25°C
IF=150A , VGE=0V, TVj =125°C
IRRM
Qrr
Erec
RthJCD
Max. Reverse Recovery Current IF=150A , VR=300V
Reverse Recovery Charge
diF/dt=-5400A/μs
Reverse Recovery Energy
TVj=125°C
Junction-to-Case Thermal Resistance Per Diode
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
1.6
9.3
0.29
150
160
30
40
340
370
60
70
0.85
1.35
4.1
5.3
750
1.55
1.50
180
13.0
3.5
Max.
6.5
1
5
400
0.3
0.5
Unit
V
V
V
mA
mA
nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
V
V
A
µC
mJ
K /W
-2-




 MMG150S060B6EN
MMG150S060B6EN
MODULE CHARACTERISTICS
Symbol
Parameter
TVj max Max. Junction Temperature
TVj op
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque Module-to-Sink
Torque Module Electrodes
Weight
TC=25°C unless otherwise specified
Test Conditions
AC, t=1min
RecommendedM6
RecommendedM5
Min. Typ. Max. Unit
175 °C
-40
150 °C
-40
125 °C
3000
V
350
3
5 N·m
2.5
5 N·m
160
g
300
VGE =15V
240
180
TVj=25°C
120
60
TVj=125°C
0
0 0.4 0.8 1.2 1.6 2.0 2.4
VCEV
Figure1. Typical Output characteristics
300
VCE =20V
240
180
TVj =25°C
120
TVj =125°C
60
0
5
6
7
8
9 10 11
VGEV
Figure3. Typical Transfer characteristics
300
240
180
TVj =125°C
120
60
00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCEV
Figure2. Typical Output characteristics
15
VCC=300V
IC=150A
12 VGE=±15V
TVj =125°C
Eon
9
6
Eoff
3
00
6
12
18
24
30
RG
Figure4. Switching Energy vs. Gate Resistor
-3-






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