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IGBT. MMG150W060XB6EN Datasheet

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IGBT. MMG150W060XB6EN Datasheet







MMG150W060XB6EN IGBT. Datasheet pdf. Equivalent




MMG150W060XB6EN IGBT. Datasheet pdf. Equivalent





Part

MMG150W060XB6EN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150W060XB6EN Datasheet


MacMic MMG150W060XB6EN

MMG150W060XB6EN; February 2017 PRODUCT FEATURES □ High level of integration □ 600V IGBT3 CHI P(Trench+Field Stop technology) □ Low saturation voltage and positive temper ature coefficient □ Fast switching an d short tail current □ Free wheeling diodes with fast and soft reverse recov ery □ Industry standard package with insulated copper base plate and solderi ng pins for PCB mounting □ Tem.


MacMic MMG150W060XB6EN

perature sense included APPLICATIONS □ AC motor control □ Motion/servo cont rol □ Inverter and power supplies MM G150W060XB6EN Version 1 600V 150A PIM Module RoHS Compliant Rectifier+Brake +Inverter IGBT-inverter ABSOLUTE MAXI MUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Con ditions VCES VGES Collector Emitter V oltage Gate Emitter Volta.


MacMic MMG150W060XB6EN

ge TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=60℃, TJmax =175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Valu es Unit 600 V ±20 180 150 A 300 428 W Diode-inverter ABSOLUTE MAXIM UM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Con ditions VRRM Repetitive Reverse V.



Part

MMG150W060XB6EN

Description

IGBT

Manufacture

MacMic

Datasheet
Download MMG150W060XB6EN Datasheet




 MMG150W060XB6EN
February 2017
PRODUCT FEATURES
High level of integration
600V IGBT3 CHIP(Trench+Field Stop technology)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
MMG150W060XB6EN
Version 1
600V 150A PIM Module
RoHS Compliant
Rectifier+Brake+Inverter
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=60, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
180
150
A
300
428
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
150
A
300
2000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3





 MMG150W060XB6EN
MMG150W060XB6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25
IC=150A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=150A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=150A
RG =3.3,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
RthJC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
1.6
9.3
290
150
160
30
40
340
370
60
70
0.85
1.35
4.1
5.3
750
Max. Unit
6.5
1.9
V
1
mA
5
mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.35 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , VGE=0V, TJ=25
IF=150A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=150A , VR=300V
dIF/dt=-5400A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
V
1.50
160
ns
180
A
13
µC
3.5
mJ
0.6 K /W
4





 MMG150W060XB6EN
MMG150W060XB6EN
Diode-RECTIFIER
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current Per Diode
IFRMS R.M.S. Forward Current Per Diode
TC=80
IRMS
R.M.S. Current at rectifier output
Non Repetitive Surge
IFSM
Forward Current
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
I2t
TJ=45, t=10ms, 50Hz
TJ=45, t=8.3ms, 60Hz
Values
Unit
1600
V
80
125
150
A
1050
1151
5510
5508
A2S
Diode-RECTIFIER
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=150A , TJ =25
IF=150A , TJ =150
IR
Reverse Leakage Current
VR=1600V, TJ=25
VR=1600V, TJ=150
RthJCD Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.18
1.15
Max.
1.4
50
1
0.46
Unit
V
V
µA
mA
K /W
IGBT-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=70, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
125
100
A
200
330
W
Diode-Brake chopper
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ=125, t=10ms, VR=0V
Values
Unit
600
V
50
A
100
330
A2S
5



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