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N-Channel MOSFET. SM4377 Datasheet

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N-Channel MOSFET. SM4377 Datasheet






SM4377 MOSFET. Datasheet pdf. Equivalent




SM4377 MOSFET. Datasheet pdf. Equivalent





Part

SM4377

Description

N-Channel MOSFET

Manufacture

Sinopower

Datasheet
Download SM4377 Datasheet


Sinopower SM4377

SM4377; SM4377NSKP Features • 30V/50A, RDS( ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9. 6mΩ (max.) @ VGS=4.5V • Provide Exc ellent Qgd x Rds-on • 100% UIS + R Tested g • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancem ent Mode MOSFET Pin Description DDDD S S SG DFN5x6A-8_EP (5,6,7,8) DD DD Pi n 1 Applications (4) G • Power.


Sinopower SM4377

Management in Desktop Computer or DC/DC Converters. Ordering and Marking Infor mation SSS ( 1, 2, 3 ) N-Channel MOSFE T SM4377NS Assembly Material Handling Code Temperature Range Package Code P ackage Code KP : DFN5x6A-8_EP Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel A ssembly Material G : Halogen and Lead F ree Device SM4377.


Sinopower SM4377

NS KP : SM4377 XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products co ntain molding compounds/die attach mate rials and 100% matte tin plate terminat ion finish; which are fully compliant w ith RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirement s of IPC/JEDEC J-STD-020D for MSL class ification at lead-free peak reflow temp erature. SINOPOWER.



Part

SM4377

Description

N-Channel MOSFET

Manufacture

Sinopower

Datasheet
Download SM4377 Datasheet




 SM4377
SM4377NSKP
Features
30V/50A,
RDS(ON)= 7m(max.) @ VGS=10V
RDS(ON)= 9.6m(max.) @ VGS=4.5V
Provide Excellent Qgd x Rds-on
100% UIS + R Tested
g
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
(4) G
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4377NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4377NS KP :
SM4377
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
1
Rev. A.9 - August, 2015
www.sinopowersemi.com





 SM4377
SM4377NSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
IDP Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
PD b Maximum Power Dissipation
RθJA b Thermal Resistance-Junction to Ambient
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady State
30
±20
150
-55 to 150
30
120
85
50*
35
32
12.8
3.9
12.8
10.2
1.73
1.11
28
72
V
°C
°C
A
A
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
L=0.3mH
L=0.5mH
25
19
A
14
L=0.1mH
31
EAS c Avalanche Energy, Single pulse
L=0.3mH
54
mJ
L=0.5mH
50
Note a* Current limited by bond wire.
Note bSurface Mounted on 1in2 pad area, t =999sec.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
2
Rev. A.9 - August, 2015
www.sinopowersemi.com





 SM4377
SM4377NSKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
BVDSSt
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250µA
30
VGS=0V, ID(aval)=10A
Tcase=25°C, ttransient=100ns
34
VDS=24V, VGS=0V
-
TJ=85°C
-
VDS=VGS, IDS=250µA
1.5
VGS=±20V, VDS=0V
-
VGS=10V, IDS=30A
-
TJ=125°C -
VGS=4.5V, IDS=15A
-
VDS=5V, IDS=30A
-
ISD=15A, VGS=0V
-
-
-
IDS=15A, dlSD/dt=100A/µs
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,F=1MHz 0.7
VGS=0V,
980
VDS=15V,
158
Frequency=1.0MHz
90
-
VDD=15V, RL=15,
-
IDS=1A, VGEN=10V,
RG=6
-
-
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=30A
-
Qg Total Gate Charge
-
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
-
IDS=30A
-
Qgd Gate-Drain Charge
-
Note dPulse test ; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
Typ.
-
-
-
-
1.8
-
5.6
8.4
7.4
70
0.85
20
11
9
10
1
1180
190
115
11
12
36
10
10
20
2.2
3.5
4.2
Max.
-
-
1
30
2.5
±100
7
-
9.6
-
1.1
-
-
-
-
1.5
1400
228
140
20
22
60
19
12
24
2.7
4.1
4.7
Unit
V
V
µA
V
nA
m
S
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
3
Rev. A.9 - August, 2015
www.sinopowersemi.com



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