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MOSFET. MSN4688 Datasheet

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MOSFET. MSN4688 Datasheet






MSN4688 MOSFET. Datasheet pdf. Equivalent




MSN4688 MOSFET. Datasheet pdf. Equivalent





Part

MSN4688

Description

MOSFET



Feature


Features  Low On resistance  4.5V/ -4.5V drive  RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to- Source Voltage Gate-to-Source Voltage D rain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Diss ipation Channel Temperature Storage Tem perature Symbol Conditions Ratings N -Ch P-Ch VDSS VGSS ID ID.
Manufacture

maspower

Datasheet
Download MSN4688 Datasheet


maspower MSN4688

MSN4688; P PD PT Tch Tstg Drain-Source Voltage 60 -60 Gate-Source Voltage ±25 ±25 Continuous Drain Current 5 -3.5 PW ≤ 10μS, duty cycle ≤ 1% 20 -14 Mounted on a ceramic board (1000mm2 × 0.8mm) 1unit 1.3 Mounted on a ceramic board (1000mm2 ×0.8mm) 1.7 Maximum Junction Temperature 150 Storage Temp erature Range -55~+150 Unit V V A A W W ºC ºC V1.0 1/9 www.ma.


maspower MSN4688

spowersemi.com MSN4688 Electrical Char acteristics TA = 25ºC Parameter Symb ol Conditions Drain-to-Source Breakdo wn Voltage Zero-Gate Voltage Drain Curr ent Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Sour ce On-State Resistance V(BR)DSS IDSS I GSS VGS(th) RDS(ON) ID = 250μA, VGS = 0V ID = -250μA, VGS = 0V VDS = 48V, V GS = 0V VDS = -48V, V.


maspower MSN4688

GS = 0V VGS = +25V, VDS = 0V VGS = +25V, VDS = 0V VDS = VGS, ID = 250μA VDS = VGS, ID = -250μA ID = 5A, VGS = 10V ID = -3.5A, VGS = -10V N-Ch P-Ch N-Ch P- Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Ratin gs Unit Min. Typ. Max. 60 -- -60 -- -V -- -- -- 1 μA -- -- -1 -- -- ±100 nA -- -- ±100 1 2 2 .5 V -1 -2 -2.5 -- 38 52 mΩ -- 80 100 V1.0 2/9 w.

Part

MSN4688

Description

MOSFET



Feature


Features  Low On resistance  4.5V/ -4.5V drive  RoHS compliant Package Dimensions MSN4688 Absolute Maximum Ratings TA = 25ºC Parameter Drain-to- Source Voltage Gate-to-Source Voltage D rain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Diss ipation Channel Temperature Storage Tem perature Symbol Conditions Ratings N -Ch P-Ch VDSS VGSS ID ID.
Manufacture

maspower

Datasheet
Download MSN4688 Datasheet




 MSN4688
Features
Low On resistance
4.5V/-4.5V drive
RoHS compliant
Package Dimensions
MSN4688
Absolute Maximum Ratings TA = 25ºC
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
Ratings
N-Ch P-Ch
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Drain-Source Voltage
60
-60
Gate-Source Voltage
±25 ±25
Continuous Drain Current
5
-3.5
PW 10μS, duty cycle 1%
20
-14
Mounted on a ceramic board (1000mm2 ×0.8mm) 1unit
1.3
Mounted on a ceramic board (1000mm2 ×0.8mm)
1.7
Maximum Junction Temperature
150
Storage Temperature Range
-55~+150
Unit
V
V
A
A
W
W
ºC
ºC
V1.0
1/9
www.maspowersemi.com




 MSN4688
MSN4688
Electrical Characteristics TA = 25ºC
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State
Resistance
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID = 250μA, VGS = 0V
ID = -250μA, VGS = 0V
VDS = 48V, VGS = 0V
VDS = -48V, VGS = 0V
VGS = +25V, VDS = 0V
VGS = +25V, VDS = 0V
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
ID = 5A, VGS = 10V
ID = -3.5A, VGS = -10V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Ratings
Unit
Min. Typ. Max.
60
--
-60
--
--
V
--
--
--
1
μA
--
--
-1
--
--
±100
nA
--
--
±100
1
2
2.5
V
-1
-2
-2.5
--
38
52
mΩ
--
80
100
V1.0
2/9
www.maspowersemi.com




 MSN4688
MSN4688
Electrical Characteristics TA = 25ºC (Continued)
Parameter
Symbol
Conditions
Static Drain-to-Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Ciss
Coss
Crss
ID = 4A, VGS = 4.5V
ID = -3.1A, VGS = -4.5V
VDS = 30V, VGS = 0V, f = 1MHz
VDS = -30V, VGS = 0V, f = 1MHz
VDS = 30V, VGS = 0V, f = 1MHz
VDS = -30V, VGS = 0V, f = 1MHz
VDS = 30V, VGS = 0V, f = 1MHz
VDS = -30V, VGS = 0V, f = 1MHz
Turn-on Delay Time
Rise Time
td(on)
tr
N-Channel
VGEN = 10V, VDS = 30V,
RL = 30Ω, ID = 1A, RGEN = 6Ω
Turn-off Delay Time
Fall Time
td(off)
tf
P-Channel
VGEN = -10V, VDS = -30V,
RL = 30Ω, ID = -1A, RGEN = 6Ω
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Qg
N-Channel
VDS = 30V, VGS = 10V, ID = 5A
Qgs
P-Channel
Qgd
VDS = -30V, VGS = -10V,
Diode Forward Voltage
IS = 2.5A, VGS = 0V
VSD
IS = -2.5A, VGS = 0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Ratings
Unit
Min. Typ. Max.
--
55
75
mΩ
--
100
135
--
915
--
pF
--
1050
--
--
70
--
pF
--
70
--
--
45
--
pF
--
50
--
--
9
17
nS
--
7
14
--
6
12
nS
--
8
15
--
25
46
nS
--
47
86
--
5
10
nS
--
17
32
--
19
27
nC
--
22
31
--
4.4
--
nC
--
2.8
--
--
4.4
--
nC
--
5
--
--
0.8
1.1
V
--
-0.8
-1.1
V1.0
3/9
www.maspowersemi.com






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