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N-Channel MOSFET. SQJA68EP Datasheet

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N-Channel MOSFET. SQJA68EP Datasheet






SQJA68EP MOSFET. Datasheet pdf. Equivalent




SQJA68EP MOSFET. Datasheet pdf. Equivalent





Part

SQJA68EP

Description

Automotive N-Channel MOSFET



Feature


www.vishay.com SQJA68EP Vishay Siliconi x Automotive N-Channel 100 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6 .15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES • TrenchFE T® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Materi al categorization: for definitions of c ompliance please see www.vishay.com/doc ?99912 D PRODUCT SUMMARY VDS.
Manufacture

Vishay

Datasheet
Download SQJA68EP Datasheet


Vishay SQJA68EP

SQJA68EP; (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Conf iguration Package 100 0.0920 0.1170 14 Single PowerPAK SO-8L G S N-Channel M OSFET ABSOLUTE MAXIMUM RATINGS (TC = 2 5 °C, unless otherwise noted) PARAMET ER SYMBOL Drain-source voltage Gate-s ource voltage Continuous drain current Continuous source current (diode conduc tion) a Pulsed drain .


Vishay SQJA68EP

current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 100 ± 20 14 8 15 17 9 4 45 15 -55 to +175 260 UNIT V A mJ W °C THE.


Vishay SQJA68EP

RMAL RESISTANCE RATINGS PARAMETER Junct ion-to-ambient Junction-to-case (drain) PCB mount c SYMBOL RthJA RthJC LIMI T 70 3.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mou nted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc ?73257). The PowerPAK SO-8L is a leadle ss package. The end of t.

Part

SQJA68EP

Description

Automotive N-Channel MOSFET



Feature


www.vishay.com SQJA68EP Vishay Siliconi x Automotive N-Channel 100 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6 .15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES • TrenchFE T® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Materi al categorization: for definitions of c ompliance please see www.vishay.com/doc ?99912 D PRODUCT SUMMARY VDS.
Manufacture

Vishay

Datasheet
Download SQJA68EP Datasheet




 SQJA68EP
www.vishay.com
SQJA68EP
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
Package
100
0.0920
0.1170
14
Single
PowerPAK SO-8L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
14
8
15
17
9
4
45
15
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.3
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0807-Rev. A, 22-May-17
1
Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 SQJA68EP
www.vishay.com
SQJA68EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 100 V
VGS = 0 V VDS = 100 V, TJ = 125 °C
VGS = 0 V VDS = 100 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 4 A
VGS = 4.5 V
ID = 3 A
VGS = 10 V
ID = 4 A, TJ = 125 °C
VGS = 10 V
ID = 4 A, TJ = 175 °C
VDS = 15 V, ID = 4 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 50 V, ID = 3 A
f = 1 MHz
VDD = 50 V, RL = 33.3 Ω
ID 1.5 A, VGEN = 10 V, Rg = 1 Ω
Pulsed current a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 4 A, VGS = 0 V
IF = 3 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
MIN.
100
1.5
-
-
-
-
6
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX.
-
-
2.0
2.5
-
± 100
-
1
-
50
-
150
-
-
0.0765 0.0920
0.0967 0.1170
- 0.1620
- 0.2056
8.6
-
212
280
118
160
15
20
4.7
8
0.8
-
1.3
-
4
6
9
15
5
10
15
30
5
10
-
17
0.88
1.2
29
60
27
55
19
-
10
-
-1.9
-
UNIT
V
nA
μA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
ns
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0807-Rev. A, 22-May-17
2
Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 SQJA68EP
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJA68EP
Vishay Siliconix
20
16
12
8
4
0
0
Axis Title
VGS = 10 V thru 5 V
VGS = 4 V
10000
1000
100
VGS = 3 V
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
10
10
Output Characteristics
Axis Title
15
10000
12
1000
9
6
TC = 25 °C
3 TC = 125 °C
TC = -55 °C
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
100
10
10
15
12
TC = 25 °C
9
Axis Title
TC = -55 °C
10000
1000
6
TC = 125 °C
100
3
0
10
0
2
4
6
8
10
ID - Drain Current (A)
2nd line
Transconductance
Axis Title
0.30
10000
0.24
0.18
0.12
0.06
VGS = 4.5 V
VGS = 10 V
1000
100
0.00
0
2
4
6
8
ID - Drain Current (A)
2nd line
10
10
On-Resistance vs. Drain Current
Axis Title
400
10000
320
1000
240
Ciss
160
80
Crss
Coss
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
100
Axis Title
10
ID = 3 A
8
VDS = 50 V
6
4
2
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
5
S17-0807-Rev. A, 22-May-17
3
Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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