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IGBT. MMG200B065PD6EN Datasheet

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IGBT. MMG200B065PD6EN Datasheet






MMG200B065PD6EN IGBT. Datasheet pdf. Equivalent




MMG200B065PD6EN IGBT. Datasheet pdf. Equivalent





Part

MMG200B065PD6EN

Description

IGBT



Feature


November 2017 MMG200B065PD6EN 650V 200 A Three Level Inverter Module Version 01 RoHS Compliant PRODUCT FEATURES ■¡ 650V IGBT3 CHIP(Trench+Field Stop tec hnology) □ Low saturation voltage and positive temperature coefficient □ L ow switching losses and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Temperatu re sense included APPLICATI.
Manufacture

MacMic

Datasheet
Download MMG200B065PD6EN Datasheet


MacMic MMG200B065PD6EN

MMG200B065PD6EN; ONS □ 3-Level-Applications □ Solar A pplications □ UPS Systems IGBT(T1、 T2、T3、T4) ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VC ES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Co llector Current TC=25℃,TJmax=175℃ TC=60℃,TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Pow.


MacMic MMG200B065PD6EN

er Dissipation Per IGBT TC=25℃, TJmax =175℃ Values Unit 650 V ±20 235 200 A 400 600 W Diode(D1~D6) AB SOLUTE MAXIMUM RATINGS (T C =25°C unle ss otherwise specified ) Symbol Param eter/Test Conditions VRRM Repetitive R everse Voltage TJ=25℃ IF(AV) Avera ge Forward Current(D1~D4) IFRM Repe titive Peak Forward Current(D1~D4) tp =1ms Values Unit 650 V 150 .


MacMic MMG200B065PD6EN

A 300 I2t IF(AV) IFRM I2t (D1~D4) T J =125℃, t=10ms, VR=0V Average Forwa rd Current(D5、D6) Repetitive Peak Fo rward Current(D5、D6) tp=1ms (D5、D6 ) TJ =125℃, t=10ms, VR=0V 1450 A2S 200 A 400 2650 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+8.

Part

MMG200B065PD6EN

Description

IGBT



Feature


November 2017 MMG200B065PD6EN 650V 200 A Three Level Inverter Module Version 01 RoHS Compliant PRODUCT FEATURES ■¡ 650V IGBT3 CHIP(Trench+Field Stop tec hnology) □ Low saturation voltage and positive temperature coefficient □ L ow switching losses and short tail curr ent □ Free wheeling diodes with fast and soft reverse recovery □ Temperatu re sense included APPLICATI.
Manufacture

MacMic

Datasheet
Download MMG200B065PD6EN Datasheet




 MMG200B065PD6EN
November 2017
MMG200B065PD6EN
650V 200A Three Level Inverter Module
Version 01
RoHS Compliant
PRODUCT FEATURES
□ 650V IGBT3 CHIP(Trench+Field Stop technology)
□ Low saturation voltage and positive temperature coefficient
□ Low switching losses and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Temperature sense included
APPLICATIONS
□ 3-Level-Applications
□ Solar Applications
□ UPS Systems
IGBT(T1、T2、T3、T4)
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃,TJmax=175℃
TC=60℃,TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
650
V
±20
235
200
A
400
600
W
Diode(D1~D6) ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified )
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV)
Average Forward Current(D1~D4)
IFRM
Repetitive Peak Forward Current(D1~D4) tp=1ms
Values
Unit
650
V
150
A
300
I2t
IF(AV)
IFRM
I2t
(D1~D4)
TJ =125℃, t=10ms, VR=0V
Average Forward Current(D5、D6)
Repetitive Peak Forward Current(D5、D6) tp=1ms
(D5、D6)
TJ =125℃, t=10ms, VR=0V
1450
A2S
200
A
400
2650
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.com




 MMG200B065PD6EN
MMG200B065PD6EN
IGBT(T1、T2、T3、T4)
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3.2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25℃
IC=200A, VGE=15V, TJ=150℃
ICES
Collector Leakage Current
VCE=650V, VGE=0V, TJ=25℃
VCE=650V, VGE=0V, TJ=150℃
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=200A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=150℃
TJ=25℃
TJ=150℃
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=150℃
TJ=25℃
TJ=150℃
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=25℃
TJ=150℃
TJ=25℃
TJ=150℃
ISC
Short Circuit Current
tpsc≤6µS , VGE=15V
TJ=125℃,VCC=360V
RthJC Junction to Case Thermal Resistance ( Per IGBT)
Min.
4.9
-400
Typ.
5.8
1.45
1.7
2
2.15
12.4
0.37
90
110
60
60
390
420
60
80
2.5
3.1
5.5
7.1
1000
Max. Unit
6.5
1.9
V
1
mA
5
400 nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.25 K /W
Diode(D1~D6) ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min. Typ.
VF
Forward Voltage(D1~D4)
IF=150A , VGE=0V, TJ=25℃
IF=150A , VGE=0V, TJ=150℃
trr
Reverse Recovery Time(D1~D4)
IRRM
QRR
Max. Reverse Recovery Current(D1~D4)
Reverse Recovery Charge(D1~D4)
IF=150A , VR=300V
dIF/dt=-1700A/μs
TJ =150℃
Erec
Reverse Recovery Energy(D1~D4)
1.55
1.45
130
80
13
3.5
RthJCD Junction to Case Thermal Resistance( Per Diode)(D1~D4)
VF
Forward Voltage(D5、D6)
IF=200A , VGE=0V, TJ=25℃
IF=200A , VGE=0V, TJ=150℃
1.55
1.45
trr
Reverse Recovery Time(D5、D6)
135
IRRM
QRR
Max. Reverse Recovery Current(D5、D6)
Reverse Recovery Charge(D5、D6)
IF=200A , VR=300V
dIF/dt=-2300A/μs
TJ =150℃
148
20
Erec
Reverse Recovery Energy(D5、D6)
5
RthJCD Junction to Case Thermal Resistance( Per Diode)(D5、D6)
2
Max. Unit
1.95
V
ns
A
µC
mJ
0.6 K /W
1.95
V
ns
A
µC
mJ
0.45 K /W




 MMG200B065PD6EN
MMG200B065PD6EN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25℃
B25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
KΩ
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
Recommended(M6)
Recommended(M6)
Weight
Values
Unit
175
-40~150
℃
-40~125
3000
V
ï¹¥200
3~5
Nm
3~5
Nm
300
g
400
25℃
300
150℃
200
100
VGE=15V
0
0
1
2
3
VCE(V)
Figure 1. Typical Output Characteristics IGBT
3
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
200
Vge=9V
100
TJ=150℃
0
0
1
2
3
4
5
VCE(V)
Figure 2. Typical Output Characteristics IGBT






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