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IGBT. MMG200D120B6TN Datasheet

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IGBT. MMG200D120B6TN Datasheet






MMG200D120B6TN IGBT. Datasheet pdf. Equivalent




MMG200D120B6TN IGBT. Datasheet pdf. Equivalent





Part

MMG200D120B6TN

Description

IGBT



Feature


April 2015 MMG200D120B6TN Version 01 1200V 200A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+ Field Stop technology) □ High short c ircuit capability,self limiting short c ircuit current □ VCE(sat) with positi ve temperature coefficient □ Fast swi tching and short tail current □ Free wheeling diodes with fast and soft reve rse recovery □ Low switching.
Manufacture

MacMic

Datasheet
Download MMG200D120B6TN Datasheet


MacMic MMG200D120B6TN

MMG200D120B6TN; losses APPLICATIONS □ High frequency switching application □ Medical appl ications □ Motion/servo control □ U PS systems IGBT-inverter ABSOLUTE MAX IMUM RATINGS Symbol Parameter/Test Co nditions VCES Collector Emitter Volta ge TJ=25℃ VGES Gate Emitter Voltag e IC DC Collector Current TC=25℃ T C=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Di.


MacMic MMG200D120B6TN

ssipation Per IGBT T C =25°C unless ot herwise specified Values Unit 1200 ±20 V 290 200 A 400 1050 W Dio de-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Valu es Unit VRRM Repetitive Reverse Volt age TJ=25℃ 1200 V IF(AV) IFRM I2t Average Forward Current Repetitive Pe ak Forward Current TC=.


MacMic MMG200D120B6TN

25℃ tp=1ms TJ =125℃, t=10ms, VR=0V 200 400 A 7750 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-5 19-85162291 Post Code:213022 Website www.macmicst.com MMG200D120B6TN IGB T-inverter ELECTRICAL CHARACTERISTICS Symbol Parameter/Test Condition.

Part

MMG200D120B6TN

Description

IGBT



Feature


April 2015 MMG200D120B6TN Version 01 1200V 200A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+ Field Stop technology) □ High short c ircuit capability,self limiting short c ircuit current □ VCE(sat) with positi ve temperature coefficient □ Fast swi tching and short tail current □ Free wheeling diodes with fast and soft reve rse recovery □ Low switching.
Manufacture

MacMic

Datasheet
Download MMG200D120B6TN Datasheet




 MMG200D120B6TN
April 2015
MMG200D120B6TN
Version 01
1200V 200A IGBT Module
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=80
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1200
±20
V
290
200
A
400
1050
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
1200
V
IF(AV)
IFRM
I2t
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
TJ =125, t=10ms, VR=0V
200
400
A
7750
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG200D120B6TN
MMG200D120B6TN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VGE(th)
VCE(sat)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=8mA
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=600V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=200A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=200A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=600V,IC=200A
RG =3.6,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc10µS , VGE=15V
TJ=125,VCC=900V
5.0
-400
5.8
1.7
1.9
3.8
1.9
14
500
160
170
40
45
450
520
100
160
10
15
16.5
25.0
800
6.5
2.15 V
1 mA
10 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.12 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Min. Typ. Max. Unit
VF
trr
IRRM
QRR
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=125
IF=200A , VR=600V
dIF/dt=-4000A/μs
TJ =125
Reverse Recovery Energy
Junction to Case Thermal Resistance Per Diode
1.65 2.15
1.65
V
290
ns
190
A
36
µC
17
mJ
0.2 K /W
2




 MMG200D120B6TN
MMG200D120B6TN
MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
150
-40~125
-40~125
3000
V
CTI
Comparative Tracking Index
225
Torque
to heatsink
to terminal
RecommendedM6
RecommendedM6
3~5
Nm
2.5~5
Nm
Weight
300
g
400
25
300
125
200
100
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
400
VCE=20V
300
25
200
125
100
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer characteristics
IGBT-inverter
400
300
200
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
100
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
100
VCE=600V
80
IC=200A
VGE=±15V
TJ=125
60
40
20
0
0
Eon
Eoff
6 12 18 24 30 36
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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