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IGBT. MMG200HB060B6EN Datasheet

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IGBT. MMG200HB060B6EN Datasheet






MMG200HB060B6EN IGBT. Datasheet pdf. Equivalent




MMG200HB060B6EN IGBT. Datasheet pdf. Equivalent





Part

MMG200HB060B6EN

Description

IGBT



Feature


May 2015 MMG200HB060B6EN 600V 200A IGB T Module Version 01 RoHS Compliant P RODUCT FEATURES □ IGBT3 CHIP(Trench+F ield Stop technology) □ High short ci rcuit capability,self limiting short ci rcuit current □ VCE(sat) with positiv e temperature coefficient □ Fast swit ching and short tail current □ Free w heeling diodes with fast and soft rever se recovery □ Low switching .
Manufacture

MacMic

Datasheet
Download MMG200HB060B6EN Datasheet


MacMic MMG200HB060B6EN

MMG200HB060B6EN; losses APPLICATIONS □ High frequency switching application □ Medical appli cations □ Motion/servo control □ UP S systems IGBT-inverter ABSOLUTE MAXI MUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Con ditions VCES Collector Emitter Voltag e TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC =60℃ ICM Repetitive Peak Coll.


MacMic MMG200HB060B6EN

ector Current tp=1ms Ptot Power Dissi pation Per IGBT Diode-inverter ABSOLU TE MAXIMUM RATINGS (T C =25°C unless o therwise specified) Symbol Parameter/ Test Conditions VRRM Repetitive Rever se Voltage TJ=25℃ IF(AV) Average F orward Current TC=25℃ IFRM Repetit ive Peak Forward Current I2t tp=1ms T J =125℃, t=10ms, VR=0V Values 600 ± 20 240 200 400 600 Unit V.


MacMic MMG200HB060B6EN

A W Values 600 200 400 3500 Unit V A A2S MacMic Science & Technology Co., L td. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Provi nce, P. R .of China Tel.:+86-519-851 63708 Fax:+86-519-85162291 Post Code 213022 Website:www.macmicst.com 1 MMG200HB060B6EN IGBT-inverter ELECTR ICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol.

Part

MMG200HB060B6EN

Description

IGBT



Feature


May 2015 MMG200HB060B6EN 600V 200A IGB T Module Version 01 RoHS Compliant P RODUCT FEATURES □ IGBT3 CHIP(Trench+F ield Stop technology) □ High short ci rcuit capability,self limiting short ci rcuit current □ VCE(sat) with positiv e temperature coefficient □ Fast swit ching and short tail current □ Free w heeling diodes with fast and soft rever se recovery □ Low switching .
Manufacture

MacMic

Datasheet
Download MMG200HB060B6EN Datasheet




 MMG200HB060B6EN
May 2015
MMG200HB060B6EN
600V 200A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=60
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM
Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
TC=25
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
600
±20
240
200
400
600
Unit
V
A
W
Values
600
200
400
3500
Unit
V
A
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
1




 MMG200HB060B6EN
MMG200HB060B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th)
VCE(sat)
ICES
IGES
Rgint
Qg
Cies
Cres
td(on)
Gate Emitter Threshold Voltage
Collector Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
ISC
Short Circuit Current
VCE=VGE, IC=3.2mA
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
VCE=300V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC
Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
2.15
13
380
150
160
30
40
340
370
60
70
1
1.55
5.65
6.90
Max. Unit
6.5
1.9 V
1 mA
5 mA
400 nA
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
1000
A
0.25 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=125
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=200A , VR=300V
dIF/dt=-5700A/μs
TJ =125
Erec
Reverse Recovery Energy
RthJCD
Junction to Case Thermal Resistance Per Diode
Min.
Typ.
1.55
1.50
170
230
17
5.2
Max. Unit
1.95
V
ns
A
µC
mJ
0.45 K /W
2




 MMG200HB060B6EN
MMG200HB060B6EN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Torque
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
to heatsink
to terminal
AC, 50Hz(R.M.S), t=1minute
RecommendedM6
RecommendedM5
Weight
Min. Typ. Max. Unit
5
K
3375
K
Values
175
-40~150
-40~125
3000
3~5
2.5~5
200
Unit
V
Nm
Nm
g
400
25
300
125
200
100
0
0.0
1.0
2.0
3.0
4.0
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
400
300
200
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
100
TJ=125°C
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
400
VCE=20V
300
25
200
125
100
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
20
VCE=600V
16
IC=200A
VGE=±15V
TJ=125
12
8
Eon
4
Eoff
0
0
5
10
15
20
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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