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IGBT. MMG200S060B6EN Datasheet

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IGBT. MMG200S060B6EN Datasheet






MMG200S060B6EN IGBT. Datasheet pdf. Equivalent




MMG200S060B6EN IGBT. Datasheet pdf. Equivalent





Part

MMG200S060B6EN

Description

IGBT



Feature


April 2015 MMG200S060B6EN 600V 200A IG BT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+ Field Stop technology) □ High short c ircuit capability,self limiting short c ircuit current □ VCE(sat) with positi ve temperature coefficient □ Fast swi tching and short tail current □ Free wheeling diodes with fast and soft reve rse recovery □ Low switching.
Manufacture

MacMic

Datasheet
Download MMG200S060B6EN Datasheet


MacMic MMG200S060B6EN

MMG200S060B6EN; losses APPLICATIONS □ High frequency switching application □ Medical appl ications □ Motion/servo control □ U PS systems IGBT-inverter ABSOLUTE MAX IMUM RATINGS Symbol Parameter/Test Co nditions VCES Collector Emitter Volta ge TJ=25℃ VGES Gate Emitter Voltag e IC DC Collector Current TC=25℃ T C=60℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Di.


MacMic MMG200S060B6EN

ssipation Per IGBT T C =25°C unless ot herwise specified Values Unit 600 V ±20 240 200 A 400 600 W Diode-i nverter ABSOLUTE MAXIMUM RATINGS Symb ol Parameter/Test Conditions T C =25 C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 600 V IF(AV) IFRM Average Forward Current Repetitive Peak Forwar d Current TC=25℃ tp=1m.


MacMic MMG200S060B6EN

s 200 A 400 I2t TJ =125℃, t=10ms, V R=0V 3500 A2S MacMic Science & Techn ology Co., Ltd. Add:#18, Hua Shan Zh ong Lu, New District, Changzhou City, J ia ngsu Province, P. R .of China 1 Te l.:+86-519-85163708 Fax:+86-519-851 62291 Post Code:213022 Website:www. macmicst.com MMG200S060B6EN IGBT-inve rter ELECTRICAL CHARACTERISTICS T C =2 5°C unless otherwise specified.

Part

MMG200S060B6EN

Description

IGBT



Feature


April 2015 MMG200S060B6EN 600V 200A IG BT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+ Field Stop technology) □ High short c ircuit capability,self limiting short c ircuit current □ VCE(sat) with positi ve temperature coefficient □ Fast swi tching and short tail current □ Free wheeling diodes with fast and soft reve rse recovery □ Low switching.
Manufacture

MacMic

Datasheet
Download MMG200S060B6EN Datasheet




 MMG200S060B6EN
April 2015
MMG200S060B6EN
600V 200A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
IGBT3 CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25
TC=60
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
600
V
±20
240
200
A
400
600
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise specified
Values
Unit
VRRM
Repetitive Reverse Voltage
TJ=25
600
V
IF(AV)
IFRM
Average Forward Current
Repetitive Peak Forward Current
TC=25
tp=1ms
200
A
400
I2t
TJ =125, t=10ms, VR=0V
3500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG200S060B6EN
MMG200S060B6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE, IC=3.2mA
4.9 5.8 6.5
VCE(sat)
Collector Emitter
Saturation Voltage
ICES
IGES
Rgint
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
VCE=0V,VGE=±15V, TJ=25
1.45
1.6
-400
2
1.9 V
1 mA
5 mA
400 nA
Qg
Gate Charge
VCE=300V, IC=200A , VGE=±15V
2.15
µC
Cies
Cres
td(on)
tr
Input Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
VCE=25V, VGE=0V, f =1MHz
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
13
nF
380
pF
150
ns
160
ns
30
ns
40
ns
td(off)
tf
Eon
Eoff
ISC
Turn off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit Current
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
tpsc6µS , VGE=15V
TJ=125,VCC=360V
340
ns
370
ns
60
ns
70
ns
1
mJ
1.55
mJ
5.65
mJ
6.90
mJ
1000
A
RthJC
Junction to Case Thermal Resistance Per IGBT
0.25 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
VF
Forward Voltage
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=125
1.55 1.95
V
1.50
trr
IRRM
QRR
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
IF=200A , VR=300V
dIF/dt=-5700A/μs
TJ =125
170
ns
230
A
17
µC
Erec
Reverse Recovery Energy
5.2
mJ
RthJCD
Junction to Case Thermal Resistance Per Diode
0.45 K /W
2




 MMG200S060B6EN
MMG200S060B6EN
MODULE CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
TJmax
Max. Junction Temperature
175
TJop
Operating Temperature
-40~150
Tstg
Storage Temperature
-40~125
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
3000
V
CTI
Comparative Tracking Index
200
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
3~5
Nm
2.5~5
Nm
Weight
160
g
400
25
300
125
200
100
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCEV
Figure 1. Typical Output Characteristics
IGBT-inverter
400
VCE=20V
300
200
100
25
125
0
6 7 8 9 10 11 12
VGEV
Figure 3. Typical Transfer Characteristics
IGBT-inverter
400
300
200
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
TJ=125
100
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics
IGBT-inverter
20
VCE=300V
16
IC=200A
VGE=±15V
TJ=125
12
8
4
Eon
Eoff
0
0
4
8 12 16 20
Rg
Figure 4. Switching Energy vs Gate Resistor
IGBT-inverter
3






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