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Power MOSFET. RJK6006DPP-A0 Datasheet

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Power MOSFET. RJK6006DPP-A0 Datasheet
















RJK6006DPP-A0 MOSFET. Datasheet pdf. Equivalent













Part

RJK6006DPP-A0

Description

Power MOSFET



Feature


RJK6006DPP-A0 600V - 5A - MOS FET High S peed Power Switching Features Low on-r esistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) Lo w leakage current High speed switching Quality grade: Standard Outline RENES AS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datashee t R07DS1432EJ0100 Rev.1.00 Mar.10.2021 1. Gate 2. Drain 3. So.
Manufacture

Renesas

Datasheet
Download RJK6006DPP-A0 Datasheet


Renesas RJK6006DPP-A0

RJK6006DPP-A0; urce Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr ain to source voltage VDSS 600 V Ga te to source voltage VGSS 30 V D rain current ID Notes4 5 A Drain pe ak current ID (pulse)Notes1 15 A Bo dy-drain diode reverse drain current I DR 5 A Body-drain diode reverse drai n peak current IDR (pulse) Notes1 15 A Avalanche current .


Renesas RJK6006DPP-A0

IAP Notes3 5 A Avalanche energy EAR Notes3 1.36 mJ Channel dissipation Pch Notes2 29 W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Note: Conti nuous heavy condition (e.g. high temper ature/voltage/current or high variation of temperature) may affect a reliabili ty even if it is within the absolute ma ximum ratings. Please co.


Renesas RJK6006DPP-A0

nsider derating condition for appropriat e reliability in reference Renesas Semi conductor Reliability Handbook (Recomme ndation for Handling and Usage of Semic onductor Devices) and individual reliab ility data . Notes: 1. PW  10 s, duty cycle  1 % 2. Value at Tc = 25 C 3. STch = 25 C, Tch  150 C 4. Limited by maximum safe operation area R07DS1432EJ0100 Rev.1.00 .





Part

RJK6006DPP-A0

Description

Power MOSFET



Feature


RJK6006DPP-A0 600V - 5A - MOS FET High S peed Power Switching Features Low on-r esistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) Lo w leakage current High speed switching Quality grade: Standard Outline RENES AS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datashee t R07DS1432EJ0100 Rev.1.00 Mar.10.2021 1. Gate 2. Drain 3. So.
Manufacture

Renesas

Datasheet
Download RJK6006DPP-A0 Datasheet




 RJK6006DPP-A0
RJK6006DPP-A0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
D
12 3
G
S
Datasheet
R07DS1432EJ0100
Rev.1.00
Mar.10.2021
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID Notes4
5
A
Drain peak current
ID (pulse)Notes1
15
A
Body-drain diode reverse drain current
IDR
5
A
Body-drain diode reverse drain peak current
IDR (pulse) Notes1
15
A
Avalanche current
IAP Notes3
5
A
Avalanche energy
EAR Notes3
1.36
mJ
Channel dissipation
Pch Notes2
29
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Note:
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of Semiconductor Devices) and individual reliability data .
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25 C
3. STch = 25 C, Tch 150 C
4. Limited by maximum safe operation area
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
Page 1 of 6




 RJK6006DPP-A0
RJK6006DPP-A0
Thermal Resistance Characteristics
Item
Symbol
Max. Value Notes5
Channel to case thermal impedance
ch-c
4.31
Notes: 5. Designed target value on Renesas measurement condition. (Not tested)
(Ta = 25 C)
Unit
CW
Electrical Characteristics
(Ta = 25 C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
A VDS = 600 V, VGS = 0
Gate to source leak current
IGSS
0.1 A VGS = 30 V, VDS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
3.0
4.5
V VDS = 10 V, ID = 1 mA
RDS(on)
1.4
1.6
 ID = 2.5 A, VGS = 10 V Notes6
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
600
pF VDS = 25 V
Coss
70
pF VGS = 0
Crss
10
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
25
ns ID = 2.5 A
tr
17
ns VGS = 10 V
td(off)
60
ns RL = 80
tf
10
ns Rg = 10
Total gate charge
Gate to source charge
Gate to drain charge
Qg
19
nC VDD = 480 V
Qgs
3.4
nC VGS = 10 V
Qgd
9.2
nC ID = 5 A
Body-drain diode forward voltage
VDF
0.9
1.5
V IF = 5 A, VGS = 0 Notes6
Body-drain diode reverse recovery time
trr
250
ns IF = 5 A, VGS = 0
diFdt = 100 As
Notes: 6. Pulse test
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
Page 2 of 6




 RJK6006DPP-A0
RJK6006DPP-A0
Main Characteristics
Maximum Safe Operation Area
100
10
10 s
1
Operation in this
0.1
area is limited by
RDS(on)
0.01 Tc = 25C
1 shot
Notes7
0.0010.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
Tc = 25C
25C
6
75C
4
2
00
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
5
VGS = 10 V
Pulse Test
4
3
ID = 5 A
2
1A
2.5 A
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (C)
Typical Output Characteristics
10
Ta = 25C
5.6 V
Pulse Test
8
5.8 V
6V
7V
10 V
5.4 V
6
5.2 V
4
5V
2
VGS = 4.8 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
VGS = 10 V
Ta = 25C
Pulse Test
1
0.1
1
10
100
Drain Current ID (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di / dt = 100 A / s
VGS = 0, Ta = 25C
10
1
10
100
Reverse Drain Current IDR (A)
Notes: 7. Designed target value on Renesas measurement condition. (Not tested)
Renesas recommends that operating conditions are designed according to a document “Power MOS FET
IGBT Attention of Handling Semiconductor Devices”.
R07DS1432EJ0100 Rev.1.00
Mar.10.2021
Page 3 of 6




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