K3568 | INCHANGE
N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching Regulator Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gat.
- K3568 | INCHANGE
- N-Channel MOSFET
- isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low le.
- isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching Regulator Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuou.
- K3568 | Toshiba Semiconductor
- 2SK3568
- 2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regu.
- 2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source .