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K3568 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | K3568 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
·FEATU RES · Drain-source on-resistance:
RDS( on) ≤ 0. 52Ω@10V ·Low leakage curre nt: IDSS <100 µA @VDS = 500 V ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation ·APPLICATIONS ·Switching Regulator Applications ·A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE VDSS Drain-Sourc e Voltage 500 VGS Gate-Source Voltag e ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 4 8 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperatur e 150 Tstg Storage Temperatur . |
| Manufacture | INCHANGE |
| Datasheet |
| Part | K3568 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
·FEATU RES · Drain-source on-resistance:
RDS( on) ≤ 0. 52Ω@10V ·Low leakage curre nt: IDSS <100 µA @VDS = 500 V ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation ·APPLICATIONS ·Switching Regulator Applications ·A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE VDSS Drain-Sourc e Voltage 500 VGS Gate-Source Voltag e ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 4 8 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperatur e 150 Tstg Storage Temperatur . |
| Manufacture | INCHANGE |
| Datasheet |
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