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K3568
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching
Regulator
Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE V...
INCHANGE
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