MOSFET – Power, N-Channel
80 V, 1.0 mW
NVCW4LS001N08HA
Features
Typical RDS(on) = 0.82 mW at VGS = 10 V Typical Qg(tot) = 166 nC at VGS = 10 V AEC−Q101 Qualified RoHS Compliant
DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness
6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.6
Gate and Source : AlCu Drain : Ti−N...
