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ISCNH363N
Silicon NPN Power Transistor
Description
isc N-Channel MOSFET
Transistor
ISCNH363N FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid ...
INCHANGE
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ISCNH363N
Silicon NPN Power Transistor
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