isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 packaging ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=15(Min)@IC = 2.5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of so...
