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2SC3883

Part Number	2SC3883
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 21, 2022
Detailed Description	isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION ·High Breakdown Voltage- : VCEO= 800V (Min) ·High Switching Speed...
Datasheet	2SC3883 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION ·High Breakdown Voltage- : VCEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current- Continuous 5.
0 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www...

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