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IAUC120N04S6L005

Infineon
Part Number IAUC120N04S6L005
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description uper, IAUC120N04S6L005 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotiv...
Datasheet PDF File IAUC120N04S6L005 PDF File

IAUC120N04S6L005
IAUC120N04S6L005

Overview
uper, IAUC120N04S6L005 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.
55 mW 120 A PG-TDSON-8-53 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type IAUC120N04S6L005 Package Marking PG-TDSON-8-53 6N04L005 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current5) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ID I D,pulse V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, RthJA on 2s2p4,5) T C=25°C, t p =100µs E AS I D=60A, R G=25W I AS R G=25W V GS - P tot T C=25°C T j, T stg - Value Unit 435 A 120 60 1550 750 mJ 120 A ±16 V 187 W -55 .
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