DatasheetsPDF.com

FGH75T65UPD-F155 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH75T65UPD-F155
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 75 A FG H75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGB T technology, ON Semiconductor’s new series of field−stop trench IGBTs off er optimum performance for solar invert er, UPS, welder, and digital power gene ra−tor where low conduction and switc hing losses are essential.
Features
• Maximum Junction Temperature: TJ = 175 °C
• Positive Temperature Co−effic ient for Easy Parallel Operating
• Hi gh Current Capability
• Low Saturatio n Voltage: VCE(sat) = 1.
65 V(Typ.
) @ IC = 75 A
• 100% of Parts Tested ILM High Input Impedance
• Tightened .
Manufacture ON Semiconductor
Datasheet
Download FGH75T65UPD-F155 Datasheet
Part FGH75T65UPD-F155
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 75 A FG H75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGB T technology, ON Semiconductor’s new series of field−stop trench IGBTs off er optimum performance for solar invert er, UPS, welder, and digital power gene ra−tor where low conduction and switc hing losses are essential.
Features
• Maximum Junction Temperature: TJ = 175 °C
• Positive Temperature Co−effic ient for Easy Parallel Operating
• Hi gh Current Capability
• Low Saturatio n Voltage: VCE(sat) = 1.
65 V(Typ.
) @ IC = 75 A
• 100% of Parts Tested ILM High Input Impedance
• Tightened .
Manufacture ON Semiconductor
Datasheet
Download FGH75T65UPD-F155 Datasheet

FGH75T65UPD-F155

FGH75T65UPD-F155
FGH75T65UPD-F155

FGH75T65UPD-F155

Recommended third-party FGH75T65UPD-F155 Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)