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NGTB40N120S3WG Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part NGTB40N120S3WG
Description IGBT
Feature NGTB40N120S3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effe ctive Ultra Field Stop Trench construct ion, and provides superior performance in demanding switching applications, of fering low switching losses.
The IGBT i s well suited for applications that req uire fast switching IGBT with low VF di odes, e.
g.
phase−shifted full bridge, etc.
Incorporated into the device is a free wheeling diode with a low forward voltage.
Features
• Extremely Effic ient Trench with Field Stop Technology
• TJmax = 175°C
• Low VF Reverse D iode
• Optimized for Hi .
Manufacture ON Semiconductor
Datasheet
Download NGTB40N120S3WG Datasheet
Part NGTB40N120S3WG
Description IGBT
Feature NGTB40N120S3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effe ctive Ultra Field Stop Trench construct ion, and provides superior performance in demanding switching applications, of fering low switching losses.
The IGBT i s well suited for applications that req uire fast switching IGBT with low VF di odes, e.
g.
phase−shifted full bridge, etc.
Incorporated into the device is a free wheeling diode with a low forward voltage.
Features
• Extremely Effic ient Trench with Field Stop Technology
• TJmax = 175°C
• Low VF Reverse D iode
• Optimized for Hi .
Manufacture ON Semiconductor
Datasheet
Download NGTB40N120S3WG Datasheet

NGTB40N120S3WG

NGTB40N120S3WG
NGTB40N120S3WG

NGTB40N120S3WG

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