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FGH50T65SQD Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH50T65SQD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 50 A FG H50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 4th gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Max Junction Tem perature TJ = 175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 50 A
• 100% of th e Parts Tested for ILM
• High Input I mpedance
• Fast Switching
• Tig .
Manufacture ON Semiconductor
Datasheet
Download FGH50T65SQD Datasheet
Part FGH50T65SQD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 50 A FG H50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 4th gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Max Junction Tem perature TJ = 175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 50 A
• 100% of th e Parts Tested for ILM
• High Input I mpedance
• Fast Switching
• Tig .
Manufacture ON Semiconductor
Datasheet
Download FGH50T65SQD Datasheet

FGH50T65SQD

FGH50T65SQD
FGH50T65SQD

FGH50T65SQD

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