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FGH40T65UQDF Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FGH40T65UQDF
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65UQDF Description Using novel fiel d stop IGBT technology, ON Semiconducto r’s new series of field stop 4th gene ration IGBTs offer superior conduction and switching performance and easy para llel operation.
This device is well sui ted for the resonant or soft switching application such as induction heating a nd MWO.
Features
• Max Junction Tempe rature 175°C
• Positive Temperature Co−efficient for Easy Parallel Operat ing
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
33 V (Typ.
) @ IC = 40 A
• 100% of the Part s Tested for ILM
• High Input .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65UQDF Datasheet
Part FGH40T65UQDF
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 40 A FG H40T65UQDF Description Using novel fiel d stop IGBT technology, ON Semiconducto r’s new series of field stop 4th gene ration IGBTs offer superior conduction and switching performance and easy para llel operation.
This device is well sui ted for the resonant or soft switching application such as induction heating a nd MWO.
Features
• Max Junction Tempe rature 175°C
• Positive Temperature Co−efficient for Easy Parallel Operat ing
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
33 V (Typ.
) @ IC = 40 A
• 100% of the Part s Tested for ILM
• High Input .
Manufacture ON Semiconductor
Datasheet
Download FGH40T65UQDF Datasheet

FGH40T65UQDF

FGH40T65UQDF
FGH40T65UQDF

FGH40T65UQDF

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