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HGTG11N120CND

ON Semiconductor
Part Number HGTG11N120CND
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Title N-Channel IGBT
Description Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°...
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction...
Published Oct 3, 2022
Datasheet PDF File HGTG11N120CND PDF File


HGTG11N120CND
HGTG11N120CND


Features
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The ...



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