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HGTG11N120CND Datasheet, Equivalent, N-Channel IGBT.

N-Channel IGBT

N-Channel IGBT

 

 

 

Part HGTG11N120CND
Description N-Channel IGBT
Feature NPT Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 43 A, 1200 V HGTG1 1N120CND The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design.
This i s a new member of the MOS gated high vo ltage switching IGBT family.
IGBTs comb ine the best features of MOSFETs and bi polar transistors.
This device has the high input impedance of a MOSFET and th e low on−state conduction loss of a b ipolar transistor.
The IGBT used is the development type TA49291.
The Diode us ed is the development type TA49189.
The IGBT is ideal for many high voltage sw itching applications operating at moder ate frequencies wh .
Manufacture ON Semiconductor
Datasheet
Download HGTG11N120CND Datasheet
Part HGTG11N120CND
Description N-Channel IGBT
Feature NPT Series N-Channel IGBT with Anti-Para llel Hyperfast Diode 43 A, 1200 V HGTG1 1N120CND The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design.
This i s a new member of the MOS gated high vo ltage switching IGBT family.
IGBTs comb ine the best features of MOSFETs and bi polar transistors.
This device has the high input impedance of a MOSFET and th e low on−state conduction loss of a b ipolar transistor.
The IGBT used is the development type TA49291.
The Diode us ed is the development type TA49189.
The IGBT is ideal for many high voltage sw itching applications operating at moder ate frequencies wh .
Manufacture ON Semiconductor
Datasheet
Download HGTG11N120CND Datasheet

HGTG11N120CND

HGTG11N120CND
HGTG11N120CND

HGTG11N120CND

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