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MHT1008N

NXP

RF Power LDMOS Transistor


Description
Freescale Semiconductor Technical Data Document Number: MHT1008N Rev. 0, 5/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 28 Vdc, IDQ = 110 mA Frequency...



NXP

MHT1008N

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