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FDD3510H Datasheet, Equivalent, Power MOSFET.

Dual N & P-Channel Power MOSFET

Dual N & P-Channel Power MOSFET

 

 

 

Part FDD3510H
Description Dual N & P-Channel Power MOSFET
Feature FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13 .
9A, 80mΩ P-Channel: -80V, -9.
4A, 190 mΩ Features Q1: N-Channel „ Max rDS (on) = 80mΩ at VGS = 10V, ID = 4.
3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.
1A Q2: P-Channel „ Max rDS(on) = 1 90mΩ at VGS = -10V, ID = -2.
8A „ Max rDS(on) = 224mΩ at VGS = -4.
5V, ID = -2.
6A „ 100% UIL Tested „ RoHS Compl iant General Description These dual N and P- Channel enhancement mode Power M OSFETs are produced using ON Semiconduc tor’s advanced PowerTrench® process that has been especially tailored to .
Manufacture ON Semiconductor
Datasheet
Download FDD3510H Datasheet
Part FDD3510H
Description Dual N & P-Channel Power MOSFET
Feature FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13 .
9A, 80mΩ P-Channel: -80V, -9.
4A, 190 mΩ Features Q1: N-Channel „ Max rDS (on) = 80mΩ at VGS = 10V, ID = 4.
3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.
1A Q2: P-Channel „ Max rDS(on) = 1 90mΩ at VGS = -10V, ID = -2.
8A „ Max rDS(on) = 224mΩ at VGS = -4.
5V, ID = -2.
6A „ 100% UIL Tested „ RoHS Compl iant General Description These dual N and P- Channel enhancement mode Power M OSFETs are produced using ON Semiconduc tor’s advanced PowerTrench® process that has been especially tailored to .
Manufacture ON Semiconductor
Datasheet
Download FDD3510H Datasheet

FDD3510H

FDD3510H
FDD3510H

FDD3510H

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