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FDD3510H Datasheet, Equivalent, Power MOSFET.Dual N & P-Channel Power MOSFET Dual N & P-Channel Power MOSFET |
　
　
　
| Part | FDD3510H |
|---|---|
| Description | Dual N & P-Channel Power MOSFET |
| Feature | FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13 . 9A, 80mΩ P-Channel: -80V, -9. 4A, 190 mΩ Features Q1: N-Channel „ Max rDS (on) = 80mΩ at VGS = 10V, ID = 4. 3A  „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4. 1A Q2: P-Channel „ Max rDS(on) = 1 90mΩ at VGS = -10V, ID = -2. 8A „ Max rDS(on) = 224mΩ at VGS = -4. 5V, ID = -2. 6A „ 100% UIL Tested „ RoHS Compl iant General Description These dual N and P- Channel enhancement mode Power M OSFETs are produced using ON Semiconduc tor’s advanced PowerTrench® process that has been especially tailored to . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD3510H |
|---|---|
| Description | Dual N & P-Channel Power MOSFET |
| Feature | FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13 . 9A, 80mΩ P-Channel: -80V, -9. 4A, 190 mΩ Features Q1: N-Channel „ Max rDS (on) = 80mΩ at VGS = 10V, ID = 4. 3A  „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4. 1A Q2: P-Channel „ Max rDS(on) = 1 90mΩ at VGS = -10V, ID = -2. 8A „ Max rDS(on) = 224mΩ at VGS = -4. 5V, ID = -2. 6A „ 100% UIL Tested „ RoHS Compl iant General Description These dual N and P- Channel enhancement mode Power M OSFETs are produced using ON Semiconduc tor’s advanced PowerTrench® process that has been especially tailored to . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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