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FDMS86368-F085 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
Part | FDMS86368-F085 |
---|---|
Description | N-Channel MOSFET |
Feature | MOSFET – N-Channel, POWERTRENCH)
80 V, 80 A, 4. 5 mW FDMS86368-F085 Features • Typical RDS(on) = 3. 7 mW at VGS = 1 0 V, ID = 80 A • Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A • UIS Ca pability • AEC−Q101 Qualified • T hese Devices are Pb−Free and are RoHS Compliant Applications • Automotive Engine Control • PowerTrain Managemen t • Solenoid and Motor Drivers • In tegrated Starter/Alternator • Primary Switch for 12 V Systems MOSFET MAXIMU M RATINGS (TJ = 25°C, Unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 8 0 V VGS Gate to Source Voltage ±20 V . |
Manufacture | ON Semiconductor |
Datasheet |
Part | FDMS86368-F085 |
---|---|
Description | N-Channel MOSFET |
Feature | MOSFET – N-Channel, POWERTRENCH)
80 V, 80 A, 4. 5 mW FDMS86368-F085 Features • Typical RDS(on) = 3. 7 mW at VGS = 1 0 V, ID = 80 A • Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A • UIS Ca pability • AEC−Q101 Qualified • T hese Devices are Pb−Free and are RoHS Compliant Applications • Automotive Engine Control • PowerTrain Managemen t • Solenoid and Motor Drivers • In tegrated Starter/Alternator • Primary Switch for 12 V Systems MOSFET MAXIMU M RATINGS (TJ = 25°C, Unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 8 0 V VGS Gate to Source Voltage ±20 V . |
Manufacture | ON Semiconductor |
Datasheet |
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