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FDB8896-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | FDB8896-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB8896-F085 N-Channel PowerTrench® MOS FET
FDB8896-F085
N-Channel PowerTrench ® MOSFET 30V, 93A, 5. 7mΩ General Desc ription This N-Channel MOSFET has been designed specifically to improve the ov erall efficiency of DC/DC converters us ing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS( ON) and fast switching speed. Applicati ons • DC/DC converters Features • rDS(ON) = 5. 7mΩ, VGS = 10V, ID = 35A â €¢ rDS(ON) = 6. 8mΩ, VGS = 4. 5V, ID = 3 5A • High performance trench technolo gy for extremely low rDS(ON) • Low ga te charge • High power and cu . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDB8896-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB8896-F085 N-Channel PowerTrench® MOS FET
FDB8896-F085
N-Channel PowerTrench ® MOSFET 30V, 93A, 5. 7mΩ General Desc ription This N-Channel MOSFET has been designed specifically to improve the ov erall efficiency of DC/DC converters us ing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS( ON) and fast switching speed. Applicati ons • DC/DC converters Features • rDS(ON) = 5. 7mΩ, VGS = 10V, ID = 35A â €¢ rDS(ON) = 6. 8mΩ, VGS = 4. 5V, ID = 3 5A • High performance trench technolo gy for extremely low rDS(ON) • Low ga te charge • High power and cu . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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