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FDMD8900 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | FDMD8900 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET, N-Channel, POWERTRENCH)
Q1: 30 V , 66 A, 4 mW Q2: 30 V, 42 A, 5. 5 mW FD MD8900 General Description This devices utilizes two optimized N−ch FETs in a dual 3. 3 x 5 mm thermally enhanced po wer package. The HS Source and LS drain are internally connected providing a l ow source inductance package, helping t o provide the best FOM. Features Q1: Nâ ˆ’Channel • Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5 mW at VGS = 4. 5 V, ID = 17 A • Max rD S(on) = 6. 5 mW at VGS = 3. 8 V, ID = 15 A • Max rDS(on) = 8. 3 mW at VGS = 3. 5 V, ID = 14 A Q2: N−Channel • Max r DS(on) = 5. 5 mW at VGS = 10 V, . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDMD8900 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET, N-Channel, POWERTRENCH)
Q1: 30 V , 66 A, 4 mW Q2: 30 V, 42 A, 5. 5 mW FD MD8900 General Description This devices utilizes two optimized N−ch FETs in a dual 3. 3 x 5 mm thermally enhanced po wer package. The HS Source and LS drain are internally connected providing a l ow source inductance package, helping t o provide the best FOM. Features Q1: Nâ ˆ’Channel • Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5 mW at VGS = 4. 5 V, ID = 17 A • Max rD S(on) = 6. 5 mW at VGS = 3. 8 V, ID = 15 A • Max rDS(on) = 8. 3 mW at VGS = 3. 5 V, ID = 14 A Q2: N−Channel • Max r DS(on) = 5. 5 mW at VGS = 10 V, . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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