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FDMD8900 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part FDMD8900
Description N-Channel Power MOSFET
Feature MOSFET, N-Channel, POWERTRENCH) Q1: 30 V , 66 A, 4 mW Q2: 30 V, 42 A, 5.
5 mW FD MD8900 General Description This devices utilizes two optimized N−ch FETs in a dual 3.
3 x 5 mm thermally enhanced po wer package.
The HS Source and LS drain are internally connected providing a l ow source inductance package, helping t o provide the best FOM.
Features Q1: N Channel
• Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
• Max rDS(on) = 5 mW at VGS = 4.
5 V, ID = 17 A
• Max rD S(on) = 6.
5 mW at VGS = 3.
8 V, ID = 15 A
• Max rDS(on) = 8.
3 mW at VGS = 3.
5 V, ID = 14 A Q2: N−Channel
• Max r DS(on) = 5.
5 mW at VGS = 10 V, .
Manufacture ON Semiconductor
Datasheet
Download FDMD8900 Datasheet
Part FDMD8900
Description N-Channel Power MOSFET
Feature MOSFET, N-Channel, POWERTRENCH) Q1: 30 V , 66 A, 4 mW Q2: 30 V, 42 A, 5.
5 mW FD MD8900 General Description This devices utilizes two optimized N−ch FETs in a dual 3.
3 x 5 mm thermally enhanced po wer package.
The HS Source and LS drain are internally connected providing a l ow source inductance package, helping t o provide the best FOM.
Features Q1: N Channel
• Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
• Max rDS(on) = 5 mW at VGS = 4.
5 V, ID = 17 A
• Max rD S(on) = 6.
5 mW at VGS = 3.
8 V, ID = 15 A
• Max rDS(on) = 8.
3 mW at VGS = 3.
5 V, ID = 14 A Q2: N−Channel
• Max r DS(on) = 5.
5 mW at VGS = 10 V, .
Manufacture ON Semiconductor
Datasheet
Download FDMD8900 Datasheet

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