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NVMYS029N08LH Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVMYS029N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 2 9 mW, 22 A
NVMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 P ackage, Industry Standard • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Steady TC = 25° C ID State TC = 100°C 22 A 15 P owe . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMYS029N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 2 9 mW, 22 A
NVMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 P ackage, Industry Standard • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Steady TC = 25° C ID State TC = 100°C 22 A 15 P owe . |
| Manufacture | ON Semiconductor |
| Datasheet |
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