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NVMYS029N08LH Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVMYS029N08LH
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 2 9 mW, 22 A NVMYS029N08LH Features
• Small Footprint (5x6 mm) for Compact D esign
• Low RDS(on) to Minimize Condu ction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 P ackage, Industry Standard
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Steady TC = 25° C ID State TC = 100°C 22 A 15 P owe .
Manufacture ON Semiconductor
Datasheet
Download NVMYS029N08LH Datasheet
Part NVMYS029N08LH
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 2 9 mW, 22 A NVMYS029N08LH Features
• Small Footprint (5x6 mm) for Compact D esign
• Low RDS(on) to Minimize Condu ction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 P ackage, Industry Standard
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Steady TC = 25° C ID State TC = 100°C 22 A 15 P owe .
Manufacture ON Semiconductor
Datasheet
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NVMYS029N08LH

NVMYS029N08LH
NVMYS029N08LH

NVMYS029N08LH

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